Many different photovoltaic technologies are being developed for large-scale solar energy conversion. The wafer-based first-generation photovoltaic devices have been followed by thin-film solid semiconductor absorber layers sandwiched between two charge-selective contacts and nanostructured (or mesostructured) solar cells that rely on a distributed heterojunction to generate charge and to transport positive and negative charges in spatially separated phases. Although many materials have been used in nanostructured devices, the goal of attaining high-efficiency thin-film solar cells in such a way has yet to be achieved. Organometal halide perovskites have recently emerged as a promising material for high-efficiency nanostructured devices. Here we show that nanostructuring is not necessary to achieve high efficiencies with this material: a simple planar heterojunction solar cell incorporating vapour-deposited perovskite as the absorbing layer can have solar-to-electrical power conversion efficiencies of over 15 per cent (as measured under simulated full sunlight). This demonstrates that perovskite absorbers can function at the highest efficiencies in simplified device architectures, without the need for complex nanostructures.

Efficient planar heterojunction perovskite solar cells by vapour deposition

The development of white organic light-emitting diodes (OLEDs) holds great promise for the production of highly efficient large-area light sources. High internal quantum efficiencies for the conversion of electrical energy to light have been realized. Nevertheless, the overall device power efficiencies are still considerably below the 60-70 lumens per watt of fluorescent tubes, which is the current benchmark for novel light sources. Although some reports about highly power-efficient white OLEDs exist, details about structure and the measurement conditions of these structures have not been fully disclosed: the highest power efficiency reported in the scientific literature is 44 lm W(-1) (ref. 7). Here we report an improved OLED structure which reaches fluorescent tube efficiency. By combining a carefully chosen emitter layer with high-refractive-index substrates, and using a periodic outcoupling structure, we achieve a device power efficiency of 90 lm W(-1) at 1,000 candelas per square metre. This efficiency has the potential to be raised to 124 lm W(-1) if the light outcoupling can be further improved. Besides approaching internal quantum efficiency values of one, we have also focused on reducing energetic and ohmic losses that occur during electron-photon conversion. We anticipate that our results will be a starting point for further research, leading to white OLEDs having efficiencies beyond 100 lm W(-1). This could make white-light OLEDs, with their soft area light and high colour-rendering qualities, the light sources of choice for the future.

White organic light-emitting diodes with fluorescent tube efficiency

저작근 근전도에 관한 정상교합자와 ii급 부정교합자의 비교 연구

Glucose-derived water-soluble crystalline graphene quantum dots (GQDs) with an average diameter as small as 1.65 nm (∼5 layers) were prepared by a facile microwave-assisted hydrothermal method. The GQDs exhibits deep ultraviolet (DUV) emission of 4.1 eV, which is the shortest emission wavelength among all the solution-based QDs. The GQDs exhibit typical excitation wavelength-dependent properties as expected in carbon-based quantum dots. However, the emission wavelength is independent of the size of the GQDs. The unique optical properties of the GQDs are attributed to the self-passivated layer on the surface of the GQDs as revealed by electron energy loss spectroscopy. The photoluminescence quantum yields of the GQDs were determined to be 7–11%. The GQDs are capable of converting blue light into white light when the GQDs are coated onto a blue light emitting diode.

Deep ultraviolet photoluminescence of water-soluble self-passivated graphene quantum dots

The advent of graphene and related 2D materials has recently led to a new technology: heterostructures based on these atomically thin crystals. The paradigm proved itself extremely versatile and led to rapid demonstration of tunnelling diodes with negative differential resistance, tunnelling transistors, photovoltaic devices and so on. Here, we take the complexity and functionality of such van der Waals heterostructures to the next level by introducing quantum wells (QWs) engineered with one atomic plane precision. We describe light-emitting diodes (LEDs) made by stacking metallic graphene, insulating hexagonal boron nitride and various semiconducting monolayers into complex but carefully designed sequences. Our first devices already exhibit an extrinsic quantum efficiency of nearly 10% and the emission can be tuned over a wide range of frequencies by appropriately choosing and combining 2D semiconductors (monolayers of transition metal dichalcogenides). By preparing the heterostructures on elastic and transparent substrates, we show that they can also provide the basis for flexible and semi-transparent electronics. The range of functionalities for the demonstrated heterostructures is expected to grow further on increasing the number of available 2D crystals and improving their electronic quality.

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Light-emitting diodes by band-structure engineering in van der Waals heterostructures

White organic LEDs are seen as one of the next generation light-sources, with their potential to reach internal efficiencies of unity and their unique appearance as large-area and ultrathin devices. However, to replace existing lighting technologies, they have to be at least on par with the state-of-the-art. In terms of efficiency, the fluorescent tube with 60-70 lumen per Watt (lm W-1) in a fixture is the current benchmark. In the scientific literature, so far only values of 44 lm W-1 have been published for white OLEDs. Here, we present results (Reineke et al., Nature 459, 234 (2009)) of white OLEDs with 90 lm W-1 at an illumination relevant brightness of 1,000 candela per square meter (cd m-2). Extracting all light from the glass substrate using a 3D light extraction system, we even obtain 124 lm W-1. In order to achieve such high efficacy values, we reduced the energetic losses prior to photon emission that include ohmic and thermal relaxation losses, leading to very low operating voltages. This is accomplished by the use of doped transport layers and a novel, very energy efficient emission layer concept. Equally important, we addressed the optics of the OLED architecture, because about 80% of the generated light remains trapped in conventional devices. Therefore, we used high refractive index substrates to couple out more light and placed the emission to the second field antinode to avoid plasmonic losses. Our devices are also characterized by an outstandingly high efficiency at high brightness, reaching 74 lm W-1 at 5,000 cd m-2.

White Organic Light-Emitting Diodes with Fluorescent Tube Efficiency

Organic Zener diodes with a precisely adjustable reverse breakdown from -3 V to -15 V without any influence on the forward current-voltage curve are realized. This is accomplished by controlling the width of the charge depletion zone in a pin-diode with an accuracy of one nanometer independently of the doping concentration and the thickness of the intrinsic layer. The breakdown effect with its exponential current voltage behavior and a weak temperature dependence is explained by a tunneling mechanism across the HOMO-LUMO gap of neigh- boring molecules. The experimental data are confirmed by a minimal Hamiltonian model approach, including coherent tunneling and incoherent hopping processes as possible charge transport pathways through the effective device region.

Organic Zener Diodes: Tunneling across the Gap in Organic Semiconductor Materials

Organic Zener diodes with a precisely adjustable reverse breakdown from −3 to −15 V without any influence on the forward current−voltage curve are realized. This is accomplished by controlling the width of the charge depletion zone in a pin-diode with an accuracy of one nanometer independently of the doping concentration and the thickness of the intrinsic layer. The breakdown effect with its exponential current voltage behavior and a weak temperature dependence is explained by a tunneling mechanism across the highest occupied molecular orbital−lowest unoccupied molecular orbital gap of neighboring molecules. The experimental data are confirmed by a minimal Hamiltonian model approach, including coherent tunneling and incoherent hopping processes as possible charge transport pathways through the effective device region.

https://nano.tu-dresden.de/pubs/reprints/2010_10_NL_10_4929.pdf

The authors present an alternative method for the determination of the charge carrier mobility of organic thin films. In contrast to known methods like space charge limited current, field effect transistor and time of flight approaches, we determine the charge carrier mobility of a mixed film, serving as emission layer, within the conventional multilayer device architecture We make use of a strong delayed generation feature in the electroluminescent decay, following a short voltage pump pulse in a time-resolved set-up. Taking into account the preferentially electron transporting properties of the film, the mobility of a N,N'-di(naphthalen-2-yl)-N,N'-diphenyl-benzidine (NPB):tris(1-phenylisoquinoline) iridium [Ir(piq) 3 ] mixed film is found to be on the order of 10 -5 cm 2 (Vs) -1 .

Frank Lindner

Papers

White organic light-emitting diodes with fluorescent tube efficiency

White Organic Light-Emitting Diodes with Fluorescent Tube Efficiency

Organic Zener Diodes: Tunneling across the Gap in Organic Semiconductor Materials

Organic Zener Diodes: Tunneling across the Gap in Organic Semiconductor Materials

Measuring carrier mobility in conventional multilayer organic light emitting devices by delayed exciton generation