This paper presents a technology review of voltage-source-converter topologies for industrial medium-voltage drives. In this highly active area, different converter topologies and circuits have found their application in the market. This paper covers the high-power voltage-source inverter and the most used multilevel-inverter topologies, including the neutral-point-clamped, cascaded H-bridge, and flying-capacitor converters. This paper presents the operating principle of each topology and a review of the most relevant modulation methods, focused mainly on those used by industry. In addition, the latest advances and future trends of the technology are discussed. It is concluded that the topology and modulation-method selection are closely related to each particular application, leaving a space on the market for all the different solutions, depending on their unique features and limitations like power or voltage level, dynamic performance, reliability, costs, and other technical specifications.

Multilevel Voltage-Source-Converter Topologies for Industrial Medium-Voltage Drives

Preface. Part One Introduction. 1. Introduction. 1.1 Introduction. 1.2 Technical Requirements and Challenges. 1.3 Converter Configurations. 1.4 MV Industrial Drives. 1.5 Summary. References. Appendix. 2. High-Power Semiconductor Devices. 2.1 Introduction. 2.2 High-Power Switching Devices. 2.3 Operation of Series-Connected Devices. 2.4 Summary. References. Part Two Multipulse Diode and SCR Rectifiers. 3. Multipulse Diode Rectifiers. 3.1 Introduction. 3.2 Six-Pulse Diode Rectifier. 3.3 Series-Type Multipulse Diode Rectifiers. 3.4 Separate-Type Multipulse Diode Rectifiers. 3.5 Summary.(c) References. 4. Multipulse SCR Rectifiers. 4.1 Introduction. 4.2 Six-Pulse SCR Rectifier. 4.3 12-Pulse SCR Rectifier. 4.4 18- and 24-Pulse SCR Rectifiers. 4.5 Summary. References. 5. Phase-Shifting Transformers. 5.1 Introduction. 5.2 Y/Z Phase-Shifting Transformers. 5.3 /Z Transformers. 5.4 Harmonic Current Cancellation. 5.5 Summary. Part Three Multilevel Voltage Source Converters. 6. Two-Level Voltage Source Inverter. 6.1 Introduction. 6.2 Sinusoidal PWM. 6.3 Space Vector Modulation. 6.4 Summary. References. 7. Cascaded H-Bridge Multilevel Inverters. 7.1 Introduction. 7.2 H-Bridge Inverter. 7.3 Multilevel Inverter Topologies. 7.4 Carrier Based PWM Schemes. 7.5 Staircase Modulation. 7.6 Summary. References. 8. Diode-Clamped Multilevel Inverters. 8.1 Introduction. 8.2 Three-Level Inverter. 8.3 Space Vector Modulation. 8.4 Neutral-Point Voltage Control. 8.5 Other Space Vector Modulation Algorithms. 8.6 High-Level Diode-Clamped Inverters. 8.7 Summary. References. Appendix. 9. Other Multilevel Voltage Source Inverters. 9.1 Introduction. 9.2 NPC/H-Bridge Inverter. 9.3 Multilevel Flying-Capacitor Inverters. 9.4 Summary. References. Part Four PWM Current Source Converters. 10. PWM Current Source Inverters. 10.1 Introduction. 10.2 PWM Current Source Inverter. 10.3 Space Vector Modulation. 10.4 Parallel Current Source Inverters. 10.5 Load-Commutated Inverter (LCI). 10.6 Summary. References. Appendix. 11. PWM Current Source Rectifiers. 11.1 Introduction. 11.2 Single-Bridge Current Source Rectifier. 11.3 Dual-Bridge Current Source Rectifier. 11.4 Power Factor Control . 11.5 Active Damping Control. 11.6 Summary. References. Appendix. Part Five High-Power AC Drives. 12. Voltage Source Inverter-Fed Drives. 12.1 Introduction. 12.2 Two-Level VBSI-Based MV Drives. 12.3 Neutral-Point Clamped (NPC) Inverter-Fed Drives. 12.4 Multilevel Cascaded H-Bridge (CHB) Inverter-Fed Drives. 12.5 NPC/H-Bridge Inverter-Fed Drives. 12.6 Summary. References. 13. Current Source Inverter-Fed Drives. 13.1 Introduction. 13.2 CSI Drives with PWM Rectifiers. 13.3 Transformerless CSI Drive for Standard AC Motors. 13.4 CSI Drive with Multipulse SCR Rectifier. 13.5 LCI Drives for Synchronous Motors. 13.6 Summary. References. 14. Advanced Drive Control Schemes. 14.1 Introduction. 14.2 Reference Frame Transformation. 14.3 Induction Motor Dynamic Models. 14.4 Principle of Field-Oriented Control (FOC). 14.5 Direct Field-Oriented Control. 14.6 Indirect Field-Oriented Control. 14.7 FOC for CSI-Fed Drives. 14.8 Direct Torque Control. 14.9 Summary. References. Abbreviations. Appendix Projects for Graduate-Level Courses. P. 1 Introduction. P. 2 Sample Project. P. 3 Answers to Sample Project. Index. About the Author.

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High-Power Converters and AC Drives

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.

Power semiconductor devices and methods of manufacture

Semiconductor Power Devices

By a vertical shrink of the NPT IGBT to a structure with a thin n/sup -/ base and a low doped field stop layer a new IGBT can be realized with drastically reduced overall losses. Especially the combination of the field stop concept with a trench transistor cell results in the almost ideal carrier concentration for a device with minimum on state voltage and lowest switching losses.

The Field Stop IGBT (FS IGBT). A new power device concept with a great improvement potential

The invention relates to a vertical bipolar transistor which can be controlled by field effect, especially its structure, and to a method for producing the same. According to said method, at least one supply connection (4) and at least one control electrode (8) are set up on a first face of the substrate. The method is characterised by the following steps: producing a field stop zone (10) of a predetermined thickness and of a first conduction type on the second face of the substrate adjacent to the inner zone, and producing a collector layer (7) in the form of a Schottky contact with a disturbed pre-layer. The inventive field-effect controlled vertical bipolar transistor therefore has an inner zone (3) and a first zone and second zone adjacent thereto, and is characterised in that the second zone comprises a field stop zone (10) which is adjacent to the inner zone and a collector layer (7) which is adjacent to said field stop zone (10), the thickness of said collector layer (7) being less than 2 νm. The doping of the field stop zone (10) corresponds to the first conduction type and the doping of the collector layer (7) corresponds to a second conduction type.

Bipolar transistor which can be controlled by field effect and method for producing the same

This paper will discuss the different principal short circuit failure modes of IGBTs focusing on the new Trench-/Field-Stop-IGBT device concept. Beside the short circuit robustness limitation regarding an over temperature destruction, a new failure mode, the so called short circuit current destruction mode, is described. Necessary design aspects for Trench-/Field-Stop devices resulting in a superior short circuit robustness at least as good as the well established Non Punch Through IGBTs - are derived and proved experimentally by extreme single (e.g. Tj=200/spl deg/C!) and repetitive short circuit pulse tests (e.g. 50.000 times).

Short circuit properties of Trench-/Field-Stop-IGBTs-design aspects for a superior robustness

In this paper, the authors discuss the design of a new 1200 V trench IGBT structure. The combination of well-designed trench cell geometry and a favourably adjusted vertical carrier concentration profile leads to a trench IGBT chip with both low static and dynamic losses and a degree of ruggedness similar to state-of-the-art planar cell nonpunch-through (NPT) IGBTs, especially excellent gate oxide properties, high turn-off capability and a square short circuit safe operating area up to 1200 V.

1200 V-trench-IGBT study with square short circuit SOA

In this paper the method of manufacturing 100 /spl mu/m thin IGBT wafers is described. The key topic of new deposition processes reducing the bow of very thin wafers is discussed as well as improvements in equipment and wafer handling. These measurements are the basis to realize for the first time 600 V Non-Punch-Through IGBTs with their advantages of cost effective silicon material and a very good trade off relationship between on state voltage and turn off losses. At a similar on state voltage of about 2 V the turn off energy can be halved compared to a state of the art epi IGBT.

T. Laska

Papers

The Field Stop IGBT (FS IGBT). A new power device concept with a great improvement potential

Bipolar transistor which can be controlled by field effect and method for producing the same

Short circuit properties of Trench-/Field-Stop-IGBTs-design aspects for a superior robustness

1200 V-trench-IGBT study with square short circuit SOA

Ultra thin-wafer technology for a new 600 V-NPT-IGBT