F
Fu-Liaog Yang
Researcher at TSMC
Publications - 2
Citations - 45
Fu-Liaog Yang is an academic researcher from TSMC. The author has contributed to research in topics: Dielectric & Oxide thin-film transistor. The author has an hindex of 2, co-authored 2 publications receiving 45 citations.
Papers
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Patent
Semiconductor device with high-k gate dielectric
Chun-Chieh Lin,Wen-Chin Lee,Chenming Hu,Shang-Chih Chen,Chih-Hao Wang,Fu-Liaog Yang,Ye-Chia Yeng +6 more
TL;DR: In this paper, the first transistor has a first gate dielectric portion located between the first gate electrode and the substrate, and the second gate has a second equivalent silicon oxide thickness.
Patent
Methods of forming semiconductor devices with high-k gate dielectric
Chun-Chieh Lin,Wen-Chin Lee,Chenming Hu,Shang-Chih Chen,Chih-Hao Wang,Fu-Liaog Yang,Yee-Chia Yeo +6 more
TL;DR: In this paper, a method of fabricating an integrated circuit is provided, where a first gate dielectric portion is formed on a substrate in a first transistor region, followed by a second-stage transistor region in a second transistor region.