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Fumihiro Inoue

Researcher at Katholieke Universiteit Leuven

Publications -  91
Citations -  745

Fumihiro Inoue is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Wafer & Layer (electronics). The author has an hindex of 12, co-authored 84 publications receiving 536 citations. Previous affiliations of Fumihiro Inoue include Tohoku University & Kansai University.

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Journal ArticleDOI

Electroless Cu deposition on atomic layer deposited Ru as novel seed formation process in through-Si vias

TL;DR: In this paper, an electroless deposited Cu seed layer was used inside TSVs along their sidewalls, which worked as a seed layer for electrodeposition of Cu to fill the structure.
Patent

Semiconductor device and method of manufacturing the same

TL;DR: In this article, the authors proposed a method to reduce diffusion of a bonding material, which is used in mounting the semiconductor device into an adhesion layer, by using an insulating layer covering from the top surface of the adhesion to the semiconducting layer.
Journal ArticleDOI

Perfect conformal deposition of electroless Cu for high aspect ratio through-Si Vias

TL;DR: In this paper, the authors achieved perfect conformal electroless plating of Cu by the addition of Cl-and bis(3-sulfopropyl) disulfide to a standard plating bath.