Alongside innovative device, circuit, and microarchitecture level techniques to alleviate power and thermal problems in nanoscale CMOS-based integrated circuits (ICs), chip cooling could be an effective knob for power and thermal management. This paper analyzes IC cooling while focusing on the practical temperature range of operation. Comprehensive analyses of chip cooling for various nanometer scale bulk-CMOS and silicon-on-insulator (SOI) technologies are presented. Unlike all previous works, this analysis employs a holistic approach (combines device, circuit and system level considerations) and also takes various electrothermal couplings between power dissipation, operating frequency and die temperature into account. While chip cooling always gives performance gain at the device and circuit level, it is shown that system level power defines a temperature limit beyond which cooling gives diminishing returns and an associated cost that may be prohibitive. A scaling analysis of this temperature limit is also presented. Furthermore, it is shown that on-chip thermal gradients cannot be mitigated by global chip cooling and that localized cooling can be more effective in removing hot-spots.

Cool Chips: Opportunities and Implications for Power and Thermal Management

Since the discovery of graphene in 2004, which proved the existence of 2-D crystals in nature, layered materials also known as van der Waals solids have received extensive reexamination, especially in the single-layer and multilayer forms because of their van der Waals type structure and unique properties that not only benefit many existing electronic components but also enable novel device concepts and design architectures. Numerous research efforts have been invested in these materials, and enormous quantities of results have been generated during the past 14 years. This paper provides an overview of the key physics and technology issues along with the most promising nanoelectronic applications of these materials and also identifies the challenges in this rapidly evolving field.

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2-D Layered Materials for Next-Generation Electronics: Opportunities and Challenges

A rigorous analytical thermal model has been formulated for the analysis of self-heating effects in FinFETs, under both steady-state and transient stress conditions. 3-D self-consistent electrothermal simulations, tuned with experimentally measured electrical characteristics, were used to understand the nature of self-heating in FinFETs and calibrate the proposed model. The accuracy of the model has been demonstrated for a wide range of multifin devices by comparing it against finite element simulations. The model has been applied to carry out a detailed sensitivity analysis of self-heating with respect to various FinFET parameters and structures, which are critical for improving circuit performance and electrical overstress/electrostatic discharge (ESD) reliability. The transient model has been used to estimate the thermal time constants of these devices and predict the sensitivity of power-to-failure to various device parameters, for both long and short pulse ESD situations. Suitable modifications to the model are also proposed for evaluating the thermal characteristics of production level FinFET (or Tri-gate FET) structures involving metal-gates, body-tied bulk FinFETs, and trench contacts.

Analytical Thermal Model for Self-Heating in Advanced FinFET Devices With Implications for Design and Reliability

High-temperature and temperature nonuniformity in high-performance integrated circuits (ICs) can significantly degrade chip performance and reliability. Thus, accurate temperature information is a critical factor in chip design and verification. Conventional volume grid-based techniques, such as finite-difference and finite-element methods (FEMs), are computationally expensive. In an effort to reduce the computation time, we have developed a new method, called power blurring (PB), for calculating temperature distributions using a matrix convolution technique in analogy with image blurring. The PB method considers the finite size and boundaries of the chip as well as 3-D heat spreading in the heat sink. PB is applicable to both static and transient thermal simulations. Comparative studies with a commercial FEM tool show that the PB method is accurate within 2%, with orders of magnitude speedup compared with FEM methods. PB can be applied to very fine power maps with a grid size as small as 10 μm for a fully packaged IC or submicrometer heat sources in power electronic transistor arrays. In comparison with architecture-level thermal simulators, such as HotSpot, PB provides much more accurate temperature profiles with reduced computation time.

Power Blurring: Fast Static and Transient Thermal Analysis Method for Packaged Integrated Circuits and Power Devices

Design-time power analysis is one of the most critical tasks conducted by chip architects and circuit designers. While computer-aided power analysis tools can provide power consumption estimates for various circuit blocks, these estimates can substantially deviate from the actual power consumption of working silicon chips. We propose a novel methodology that provides accurate, detailed post-silicon spatial power estimates using the thermal infrared emissions from the backside of silicon die. We theoretically and empirically demonstrate the inherent difficulties in thermal to power inversion. These difficulties arise from measurement errors and from the inherent spatial low-pass filtering associated with heat diffusion. To address these difficulties we propose new techniques from regularization theory to invert temperature to power. Furthermore, we propose new techniques to compute the emissivities and conductances required for any infrared to power inversion method. To verify our results, a programmable circuit of micro heaters is implemented to create any desired power pattern. The thermal emissions of different known injected power patterns are captured using a state-of-the-art infrared camera, and then our characterization techniques are applied to invert the thermal emissions to power. The estimated power patterns are validated against the injected power patterns to demonstrate the accuracy of our methodology.

Post-silicon power characterization using thermal infrared emissions

As CMOS technology scales to nanometer regime, power dissipation issues and associated thermal problems have emerged as critical design concerns in most high-performance integrated circuits (ICs) including microprocessors. In this scenario, accurate estimation of the silicon junction (substrate or die) temperature is crucial for various performance analyses and chip-level thermal management. This paper introduces the notion of self-consistency in the junction temperature estimation by taking into account various electrothermal couplings between chip power, average junction temperature, operating frequency, and supply voltage. The self-consistent solutions of the average junction temperature are shown to have significant implications for various chip-level power, performance, reliability, and cooling cost tradeoffs. Moreover, a realistic package thermal model is introduced that comprehends different packaging layers and noncubic structure of the package, which are not accounted for in traditional analyses. The model is subsequently incorporated in the self-consistent substrate thermal profile estimation, which is discussed in Part II with implications for power estimation and thermal management in nanometer-scale CMOS technologies.

A Self-Consistent Substrate Thermal Profile Estimation Technique for Nanoscale ICs—Part I: Electrothermal Couplings and Full-Chip Package Thermal Model

As transistors continue to evolve along Moore's Law and silicon devices take advantage of this evolution to offer increasing performance, there is a critical need to accurately estimate the silicon-substrate (junction or die) thermal gradients and temperature profile for the development and thermal management of future generations of all high-performance integrated circuits (ICs) including microprocessors. This paper presents an accurate chip-level leakage-aware method that self-consistently incorporates various electrothermal couplings between chip power, junction temperature, operating frequency, and supply voltage for substrate thermal profile estimation and also employs a realistic package thermal model that comprehends different packaging layers and noncubic structure of the package, which are not accounted for in traditional analyses. The evaluation using the proposed methodology is efficient and shows excellent agreements with an industrial-quality computational-fluid-dynamics (CFD) based commercial software. Furthermore, the methodology is shown to become increasingly effective with increase in leakage as technology scales. It is shown that considering electrothermal couplings and realistic package thermal model not only improves the accuracy of estimating the heat distribution across the chip but also has significant implications for precise power estimation and thermal management in nanometer-scale CMOS technologies.

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A Self-Consistent Substrate Thermal Profile Estimation Technique for Nanoscale ICs—Part II: Implementation and Implications for Power Estimation and Thermal Management

G. Chrysler

Papers

A Self-Consistent Substrate Thermal Profile Estimation Technique for Nanoscale ICs—Part I: Electrothermal Couplings and Full-Chip Package Thermal Model

A Self-Consistent Substrate Thermal Profile Estimation Technique for Nanoscale ICs—Part II: Implementation and Implications for Power Estimation and Thermal Management