G
G. H. Gainer
Researcher at Oklahoma State University–Stillwater
Publications - 31
Citations - 1183
G. H. Gainer is an academic researcher from Oklahoma State University–Stillwater. The author has contributed to research in topics: Photoluminescence & Spontaneous emission. The author has an hindex of 11, co-authored 31 publications receiving 1144 citations.
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Journal ArticleDOI
“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
Yong-Hoon Cho,G. H. Gainer,Arthur J. Fischer,J. J. Song,Stacia Keller,Umesh K. Mishra,Steven P. DenBaars +6 more
TL;DR: In this article, temperature-dependent time-integrated and time-resolved photoluminescence (PL) studies of InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition were performed.
Journal ArticleDOI
Dynamics of anomalous optical transitions in Al x Ga 1 − x N alloys
TL;DR: In this article, a comprehensive study of the optical properties of epilayers with large Al mole fraction was presented, showing that the anomalous temperature-induced emission shift is attributed to energy tail states due to alloy potential inhomogeneities in the epilayer.
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Time-resolved photoluminescence of In x Ga 1 − x N / G a N multiple quantum well structures: Effect of Si doping in the barriers
C. K. Choi,Y. H. Kwon,B. D. Little,G. H. Gainer,J. J. Song,Yia-Chung Chang,Sarah L. Keller,Umesh K. Mishra,S. P. DenBaars +8 more
TL;DR: In this paper, the carrier recombination dynamics in a series of multiple quantum wells, nominally identical apart from different Si doping concentrations in the GaN barriers, was studied by time-resolved photoluminescence (PL) with excitation densities ranging from $220
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Linear and nonlinear optical properties of In x Ga 1-x N/GaN heterostructures
Yong-Hoon Cho,T. J. Schmidt,S. Bidnyk,G. H. Gainer,J. J. Song,Sarah L. Keller,Umesh K. Mishra,S. P. DenBaars +7 more
TL;DR: In this paper, the spontaneous and stimulated emission properties in blue-light-emitting multiple quantum well structures using various linear and nonlinear optical techniques were systematically studied and the results showed carrier localization features for spontaneous emission and demonstrate the presence of potential fluctuations in the active region of the active layers and interfaces.
Journal ArticleDOI
High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells
S. Bidnyk,T. J. Schmidt,Yong-Hoon Cho,G. H. Gainer,J. J. Song,Sarah L. Keller,Umesh Mishra,Steven P. DenBaars +7 more
TL;DR: In this paper, the effects of Si doping of GaN barriers on the optical properties of InGaN/GaN MQWs were investigated and the SE threshold was measured as a function of temperature and compared with bulk GaN.