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Steven P. DenBaars

Researcher at University of California, Santa Barbara

Publications -  1404
Citations -  64893

Steven P. DenBaars is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Light-emitting diode & Metalorganic vapour phase epitaxy. The author has an hindex of 118, co-authored 1366 publications receiving 60343 citations. Previous affiliations of Steven P. DenBaars include Honeywell & Colorado State University.

Papers
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Journal ArticleDOI

Prospects for LED lighting

Siddha Pimputkar, +3 more
- 01 Apr 2009 - 
TL;DR: More than one-fifth of US electricity is used to power artificial lighting as discussed by the authors and light-emitting diodes based on group III/nitride semiconductors are bringing about a revolution in energy-efficient lighting.
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Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces

D. Leonard, +4 more
- 06 Dec 1993 - 
TL;DR: In this paper, the 2D-3D growth mode transition during the initial stages of growth of highly strained InGaAs on GaAs is used to obtain quantum-sized dot structures.
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Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

Tetsuo Fujii, +5 more
- 04 Feb 2004 - 
TL;DR: In this paper, an n-side-up GaN-based LED with a hexagonal "conelike" surface has been fabricated by using the laser lift-off technique followed by an anisotropic etching process to roughen the surface.
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Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

J. P. Ibbetson, +5 more
- 30 Jun 2000 - 
TL;DR: In this paper, the origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally.
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Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

B. Heying, +7 more
- 29 Jan 1996 - 
TL;DR: In this article, the authors demonstrate that the anomalously low (002) x-ray rocking curve widths for epitaxial hexagonal GaN films on (001) sapphire are a result of a specific threading dislocation geometry.