G
G. He
Researcher at State University of New York System
Publications - 16
Citations - 316
G. He is an academic researcher from State University of New York System. The author has contributed to research in topics: Graphene & Bilayer graphene. The author has an hindex of 8, co-authored 16 publications receiving 261 citations. Previous affiliations of G. He include Beijing Institute of Technology & University at Buffalo.
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Journal ArticleDOI
Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation.
G. He,Krishnendu Ghosh,Uttam Singisetti,H. Ramamoorthy,R. Somphonsane,Girish Bohra,Masahiro Matsunaga,Ayaka Higuchi,Nobuyuki Aoki,Sina Najmaei,Yongji Gong,Xiao Zhang,Robert Vajtai,Pulickel M. Ajayan,Jonathan P. Bird +14 more
TL;DR: This work confirms the excellent potential of MoS2 as a possible channel-replacement material and highlights the role of multiple transport phenomena in governing its transistor action.
Journal ArticleDOI
"Freeing" Graphene from Its Substrate: Observing Intrinsic Velocity Saturation with Rapid Electrical Pulsing.
TL;DR: The approach of rapid pulsing allows us to "free" graphene from the deleterious influence of its substrate, revealing a pathway to achieve the superior electrical performance promised by this material.
Journal ArticleDOI
Thermally Assisted Nonvolatile Memory in Monolayer MoS2 Transistors.
G. He,H. Ramamoorthy,C.-P. Kwan,Y.-H. Lee,J. Nathawat,R. Somphonsane,Masahiro Matsunaga,Ayaka Higuchi,T. Yamanaka,Nobuyuki Aoki,Yongji Gong,Xiao Zhang,Robert Vajtai,Pulickel M. Ajayan,Jonathan P. Bird +14 more
TL;DR: The essential principles demonstrated here point the way to a new class of thermally assisted memories based on atomically thin two-dimensional semiconductors, suggesting that weak screening in the monolayer system plays a vital role in generating its strongly sensitive response to the charge-injection process.
Journal ArticleDOI
Fast energy relaxation of hot carriers near the Dirac point of graphene.
R. Somphonsane,H. Ramamoorthy,Girish Bohra,G. He,David K. Ferry,David K. Ferry,Yuichi Ochiai,Nobuyuki Aoki,Jonathan P. Bird,Jonathan P. Bird +9 more
TL;DR: In this article, the authors investigate energy relaxation of hot carriers in monolayer and bilayer graphene devices, demonstrating that the relaxation rate increases significantly as the Dirac point is approached from either the conduction or valence band.
Journal ArticleDOI
Nanoscale-Barrier Formation Induced by Low-Dose Electron-Beam Exposure in Ultrathin MoS2 Transistors
Masahiro Matsunaga,Ayaka Higuchi,G. He,Tetsushi Yamada,Peter Krüger,Yuichi Ochiai,Yongji Gong,Robert Vajtai,Pulickel M. Ajayan,Jonathan P. Bird,Nobuyuki Aoki +10 more
TL;DR: It is demonstrated how electron-beam exposure of field-effect transistors, implemented from ultrathin molybdenum disulfide (MoS2), may cause nanoscale structural modifications that in turn significantly modify the electrical operation of these devices.