K
Krishnendu Ghosh
Researcher at University at Buffalo
Publications - 33
Citations - 991
Krishnendu Ghosh is an academic researcher from University at Buffalo. The author has contributed to research in topics: Phonon & Electron mobility. The author has an hindex of 13, co-authored 30 publications receiving 626 citations. Previous affiliations of Krishnendu Ghosh include State University of New York System & Intel.
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Journal ArticleDOI
β-Gallium oxide power electronics
Andrew J. Green,James A. Speck,Grace Xing,Peter Moens,Fredrik Allerstam,Krister Gumaelius,Thomas Neyer,Andrea Arias-Purdue,Vivek Mehrotra,Akito Kuramata,Kohei Sasaki,Shinya Watanabe,Kimiyoshi Koshi,John D. Blevins,Oliver Bierwagen,Sriram Krishnamoorthy,Kevin Lee,Aaron R. Arehart,Adam T. Neal,Shin Mou,Steven A. Ringel,Avinash Kumar,Ankit Sharma,Krishnendu Ghosh,Uttam Singisetti,Wenshen Li,Kelson D. Chabak,Kyle J. Liddy,Ahmad E. Islam,Siddharth Rajan,Samuel Graham,Sukwon Choi,Zhen Chen,Masataka Higashiwaki +33 more
TL;DR: This Roadmap presents the current state-of-the-art and future challenges in 15 different topics identified by a large number of people active within the gallium oxide research community to enhance the state-ofthe-art device performance and allow for efficient, high-power, commercially scalable microelectronic systems using the newest semiconductor platform.
Journal ArticleDOI
Ab initio velocity-field curves in monoclinic β-Ga 2 O 3
TL;DR: In this article, a semi-coarse version of the Wannier-Fourier interpolation method was proposed for short-range non-polar optical phonon (EPI) elements in order to ease the computational requirement in FBMC simulation.
Journal ArticleDOI
Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation.
G. He,Krishnendu Ghosh,Uttam Singisetti,H. Ramamoorthy,R. Somphonsane,Girish Bohra,Masahiro Matsunaga,Ayaka Higuchi,Nobuyuki Aoki,Sina Najmaei,Yongji Gong,Xiao Zhang,Robert Vajtai,Pulickel M. Ajayan,Jonathan P. Bird +14 more
TL;DR: This work confirms the excellent potential of MoS2 as a possible channel-replacement material and highlights the role of multiple transport phenomena in governing its transistor action.
Journal ArticleDOI
Ab initio calculation of electron–phonon coupling in monoclinic β-Ga2O3 crystal
TL;DR: In this paper, the long-range interaction elements between electrons and polar optical phonon (POP) modes are calculated separately using the Born effective charge tensor and the direction dependence of the longrange POP coupling in a monoclinic crystal is explored and included in the transport calculations.
Journal ArticleDOI
DFT-FE – A massively parallel adaptive finite-element code for large-scale density functional theory calculations
TL;DR: In this article, the authors present an accurate, efficient and massively parallel finite-element code, DFT-FE, for large-scale ab-initio calculations (reaching ∼ 100, 000 electrons) using Kohn-Sham density functional theory.