It is argued that the absolute hydrostatic deformation potentials recently calculated for tetrahedral semiconductors with the linear muffin-tin-orbital method must be screened by the dielectric response of the material before using them to calculate electron-phonon interaction. This screening can be estimated by using the midpoint of an average dielectric gap evaluated at special (Baldereschi) points of the band structure. This dielectric midgap energy (DME) is related to the charge-neutrality point introduced by Tejedor and Flores, and also by Tersoff, to evaluate band offsets in heterojunctions and Schottky-barrier heights. We tabulate band offsets obtained with this method for several heterojunctions and compare them with other experimental and theoretical results. The DME’s are tabulated and compared with those of Tersoff’s charge-neutrality points.

Acoustic deformation potentials and heterostructure band offsets in semiconductors.

In this review article, the authors describe the use of the Hall effect in the characterisation of III-V semiconductor layers The theoretical framework is entirely analytic and they show that this is not an impediment to obtaining useful quantitative data concerning the electrically active impurities present in a layer The method is illustrated mainly in indium phosphide but gallium arsenide and other materials are discussed also Comparison with numerical data is made where appropriate

http://iopscience.iop.org/article/10.1088/0268-1242/1/3/006/pdf

The Hall effect in III-V semiconductor assessment

Crystal growth and properties of binary, ternary and quaternary (In,Ga)(As,P) alloys grown by the hydride vapor phase epitaxy technique

The “absolute” hydrostatic deformation potentials of several band states of germanium and silicon are calculated with the LMTO-ASA method. It is found that for the top valence band state dE/ d In V ≈ −8 eV. The results are compared with experimental data available. They agree with calculations based on empirical pseudopotentials provided one assumes dV0/d In V ≈ 0, where V0 is the spatially averaged pseudopotential. In order to obtain agreement with empirical tight binding results one must introduce a volume dependence of the term energies. Using the calculated deformation potentials, the dependence of the lattice constant on doping measured for n- and p-type germanium, silicon, and GaAs is discussed.



Mit der LMTO-ASA-Methode werden die „absoluten” hydrostatischen Deformationspotentiale einiger Bandzustande von Germanium und Silizium berechnet. Es wird gefunden, das fur den oberen Valenzbandzustand dE/d In V ≈ −8 eV ist. Die Ergebnisse werden mit vorhandenen experimentellen Werten verglichen. Sie stimmen mit Berechnungen auf der Grundlage empirischer Pseudopotentiale uberein, vorausgesetzt, man nimmt dV0/d In V ≈ 0 an, wobei V0 das raumlich gemittelte Pseudopotential ist. Um Ubereinstimmung mit empirischen tight-binding-Ergebnissen zu erhalten, mus eine Volumenabhangigkeit der Termenergien eingefuhrt werden. Die Abhangigkeit der Gitterkonstante von der Dotierung, die fur n- und p-leitendes Germanium, Silizium und GaAs gemessen wurde, wird ebenfalls diskutiert, wobei die berechneten Deformationspotentiale benutzt werden.

Absolute Hydrostatic Deformation Potentials of Tetrahedral Semiconductors

First, theoretical calculations of electron mobility and thermoelectric power in n-type InSb are reported at liquid nitrogen and room temperatures. All the scattering mechanisms of importance in InSb are taken into account. The calculations based upon a variational solution of the Boltzmann equation are compared with experimental results over the whole available range of electron concentrations. Good agreement between theoretical and experimental results is obtained using the value of deformation potential constant C = 14.6 eV. Secondly, both, experimental and theoretical investigations are made of mobility in InSb under hydrostatic pressure at 77 K within a wide range of electron concentrations. The smallest electron concentrations obtained by freezing the conduction electrons on the metastable states are of order of 1 × 1012 cm−3. Also for those smallest concentration it is possible to describe theoretically the dependence of mobility on the hydrostatic pressure using the same set of parameters as previously, and assuming some compensation of donors by acceptors.



[Russian Text Ignored].

The Electron Mobility and Thermoelectric Power in InSb at Atmospheric and Hydrostatic Pressures

Transverse magnetoresistance, Hall factor, and microwave complex conductivity of n-InSb are studied for a lattice temperature of 77 °K using an iteration method to solve the Boltzmann equation. All the relevant scattering mechanisms, band non-parabolicity, and overlap integrals, and also the effects of electron screening have been included in the analysis. Computed results are presented showing the variation of the coefficients with magnetic field and also for different microwave frequencies. Values of galvanomagnetic coefficients calculated with an acoustic phonon deformation potential of about 20 eV are found to agree well with experiments. The microwave conductivity is also found to agree with experiments to within ten percent.



Mit einer Iteratiousmethode zur Losung der Boltzmanngleichung werden transversaler Magnetowiderstand, Hallfaktor und komplexe Mikrowellenleitfahigkeit von n-leiten-dem InSb bei einer Gittertemperatur von 77 °K untersucht. Alle relevanten Streumechanis-men, Nichtparabolizitat der Bander und Uberlappungsintegrale, sowie die Eiuflusse der Elektronenabschirmuhg werden in die Analyse einbezogeri. Rechnungen werden angegeben, die die Anderung der Koeffizienten im Magnetfeld und fur verschiedene Mikrowellenfre-quenzen zeigen. Es wird gefunden, das die Werte der galvanomagnetischen Koeffizienten, die mit-einem Deformationspotential von 20 eV fur akustische Phononen berechnet wurden, gut mit den Experimenten ubereinstimmen. Auch die Mikrowellenleitfahigkeit stimmt mit den Experimenten innerhalb von zehn Prozent ubsrein.

Galvanomagnetic and Microwave Transport Coefficients of n-InSb at 77 K

Theoretical values of weak-field Hall mobility and Hall ratio of electrons in InP at 77K and 300K are presented for different impurity concentrations and compensation ratios. Calculations were done by an iterative method taking into account all the complexities of the band structure and the electron scattering mechanisms and using the most recent values of the physical constants. Calculated values are in close agreement with the recent experimental results.

Electron mobility in InP

Available experimental values of electron mobility in InSb samples with known impurity concentration are compared with the theoretical values obtained by an iteration technique including the effects of band nonparabolicity, wave‐function admixture, electron screening, and all scattering mechanisms. Experimental values for the temperature range 20–77 K are found to agree to within 10% with the theoretical values. Values for conductivity mobility, the Hall ratio, and magnetoresistance are also given for different impurity concentrations and compensation ratios. These values should be useful for obtaining the impurity concentration from the knowledge of the experimental values of these transport coefficients.

Low‐temperature electron mobility in InSb

The drift and Hall mobilities of electrons are calculated for various degrees of impurity content incorporating the effects of deformation-potential-acoustic, piezoelectric, polar-optical and ionized-impurity scattering and the non-parabolicity of the energy band. An overall agreement with the experimental results is obtained if the acoustic deformation-potential constant is taken to be 7.2 eV.

http://iopscience.iop.org/article/10.1088/0022-3719/7/10/012/pdf

Drift and Hall mobilities of electrons in InSb at 30 and 77 K

An iterative technique for the solution of the Boltzmann equation in the presence of a magnetic field is presented. The temperature dependence of low-field Hall mobility and magnetoresistance coefficient of n-type gallium arsenide is studied in the temperature range 77 to 300 °K applying this technique. Polar-mode, deformation potential acoustic, and piezo-electric scattering processes are considered, and the results are compared with those obtained by other methods. Agreement of the Hall mobility with recent experiments is found to be satisfactory.



Es wird eine iterative Technik zur Losung der Boltzmanngleichung bei Anwesenheit eines Magnetfeldes dargestellt. Die Temperaturabhangigkeit der Niedrigfeld-Hallbeweglichkeit und des Koeffizienten der Magnetowiderstandsanderung von n-leitendem Galliumarsenid wird im Temperaturbereich von 77 bis 300 °K mit dieser Technik untersucht. Es werden polare Moden, akustische Deformationspotential- und piezoelektrische Streuprozesse berucksichtigt und die Ergebnisse mit denen anderer Methoden verglichen. Die Ubereinstimmung der Hallbeweglichkeit mit neueren Experimenten ist befriedigend.

G. M. Dutta

Papers

Galvanomagnetic and Microwave Transport Coefficients of n-InSb at 77 K

Electron mobility in InP

Low‐temperature electron mobility in InSb

Drift and Hall mobilities of electrons in InSb at 30 and 77 K

Low-field galvanomagnetic transport in n-type gallium arsenide