On the two dimensional effective electron mass in quantum wells, inversion layers and NIPI superlattices of Kane type semiconductors in the presence of strong light waves: Simplified theory and relative comparison

We study the thermoelectric power under classically large magnetic field (TPM) in ultrathin films (UFs), quantum wires (QWs) of non-linear optical materials on the basis of a newly formulated electron dispersion law considering the anisotropies of the effective electron masses, the spin-orbit splitting constants and the presence of the crystal field splitting within the framework of k.p formalism. The results of quantum confined III-V compounds form the special cases of our generalized analysis. The TPM has also been studied for quantum confined II-VI, stressed materials, bismuth and carbon nanotubes (CNs) on the basis of respective dispersion relations. It is found taking quantum confined CdGeAs2, InAs, InSb, CdS, stressed n-InSb and Bi that the TPM increases with increasing film thickness and decreasing electron statistics exhibiting quantized nature for all types of quantum confinement. The TPM in CNs exhibits oscillatory dependence with increasing carrier concentration and the signature of the entirely different types of quantum systems are evident from the plots. Besides, under certain special conditions, all the results for all the materials gets simplified to the well-known expression of the TPM for non-degenerate materials having parabolic energy bands, leading to the compatibility test. (C) 2009 Elsevier B.V. All rights reserved.

Thermoelectric power in ultrathin films, quantum wires and carbon nanotubes under classically large magnetic field: Simplified theory and relative comparison

This chapter explores the quantum capacitance (\( C_{\text{g}} \)) in quantum wire field-effect transistors (QWFETs) manufactured from completely different technologically vital nonstandard materials by using all types of anisotropies of band structures in addition to splitting of bands due to large fields of the crystals inside the framework of Kane’s matrix methodology that successively generates new 1D dimensional electron energy versus wave vector relation. We derive the \( C_{\text{g}} \) under very low temperature so that the Fermi function tends to unity for QWFETs of \( {\text{Cd}}_{3} {\text{As}}_{2} ,{\text{CdGeAs}}_{2} ,{\text{InSb}},{\text{Hg}}_{1 - x} {\text{Cd}}_{x} {\text{Te}},{\text{InAs}},{\text{GaAs}},{\text{In}}_{1 - x} {\text{Ga}}_{x} {\text{As}}_{y} {\text{P}}_{1 - y} \) IV–VI, stressed materials,\( {\text{Te}},{\text{GaP,PtSb}}_{2} ,{\text{Bi}}_{2} {\text{Te}}_{3} ,{\text{Ge}},{\text{GaSb}} \) and II–V compounds using the appropriate band models. The \( C_{\text{g}} \) becomes the functions of the thickness of the quantum-confined transistors. The \( C_{\text{g}} \) varies with varying film thickness in various quantized steps and saw-tooth manners with different numerical values.

On the Quantum Capacitance of Quantum Wire Field-Effect Transistors of Compound Semiconductors

In this book, we have discussed many aspects of TPSM based on the dispersion relations of the nanostructures of different technologically important materials having different band structures in the presence of 1D, 2D, and 3D confinements of the wave-vector space of the charge carriers, respectively. In this chapter, we discuss few applications in this context in Sect. 14.2 and we shall also present a very brief review of the experimental investigations in Sect. 14.3 which is a sea in itself. Section 14.4 contains the single experimental open research problem.

Applications and Brief Review of Experimental Results

This chapter suggests the experimental determinations of 2D and 3D ERs for HD materials having arbitrary dispersion laws. The theoretical results for bulk specimens of n-Cd3As2 in the absences of band tailing are in good agreement with the suggested relationship. The concept of band gap measurement in the presence of intense external light waves is also discussed and we present additional five related applications in this context. This chapter contains a single multi-dimensional deep open research problem.

Suggestion for Experimental Determinations of 2D and 3D ERs and Few Related Applications

In this paper an attempt is made to study the electronic contribution to the elastic constants of strained III-V materials under high magnetic fields on the basis of kp theory It is found taking strained Hgi - x CdxTe and Ini - xGaxAsyPi-y lattice matched InP as examples that they increase with increasing doping and oscillate with inverse magnetic field respectively The strain enhances the numerical values of the elastic constants The theoretical formulation is in quantitative agreement with the suggested experimental method of determining the above contributions for degenerate materials having arbitrary dispersion laws In addition, the well-known results for strain free wide gap materials in the absence of magnetic field have been obtained from our generalized analysis under certain limiting conditions

https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400321716

The Electronic Contribution to The Elastic Constants of Strained III–V Materials Under High Magnetic Fields

In this paper we have studied the photoemission from quantum wells (QW), quantum wells wires (QWWs) and quantum dots (QDs) of quantum confined strained III–V compounds on the basis of a newly formulated electron dispersion law. It is found taking such quantum confined Hg1–xCdxTe and In1–xGaxAsyP1–y lattice matched InP as examples that the photoemission increases with increasing energy of the incident photons in a ladder like manner and also exhibits oscillatory dependences with changing electron concentration and film thickness respectively for all types quantum confinement. The photoemitted current is greatest in strained QDs and least in unstrained QWs. In addition the theoretical results are in agreement with the experimental datas as given elsewhere.

G. Mazumder

Papers

The Electronic Contribution to The Elastic Constants of Strained III–V Materials Under High Magnetic Fields

On thon the Photoemission from Quantum Confined Strained III–V Systems