Showing papers by "Gaetano Granozzi published in 1991"
TL;DR: In this paper, the chemistry of an argon ion-irradiated interface between an amorphous silicon dioxide film and a silicon single-crystal substrate was studied by determining the kind and depth distribution of compounds formed after nitrogen implantation at a depth more shallow than the SiO2 film thickness.
Abstract: The chemistry of an argon‐ion‐irradiated interface between an amorphous silicon dioxide film and a silicon single‐crystal substrate was studied by determining the kind and depth distribution of compounds formed after nitrogen implantation at a depth more shallow than the SiO2 film thickness. With this study we intended to obtain some insight into the chemical and physical processes involved in the formation of silicon oxynitrides in silica as a consequence of nitrogen ion implantations. Samples were mainly characterized by x‐ray photoelectron and Fourier‐transform infrared spectroscopies. Scanning electron microscopy, Rutherford backscattering spectrometry, nuclear reaction analysis, and secondary‐ion mass spectrometry techniques were also used to complete the set of results. The experimental evidences are consistent with a picture of an argon‐induced radiation damage in terms of Si—O and Si—Si bond breaking in the SiO2 and in the silicon substrate regions, respectively. The subsequently implanted nitroge...
44 citations
TL;DR: In this article, a series of self-consistent local-spin density molecular-cluster calculations has been performed to investigate hyperfine and superhyperfine properties of normal and anomalous muonium in elemental semiconductors (diamond, silicon and germanium).
6 citations
TL;DR: The surface polarity of a mercury cadmium telluride (MCT) crystal surface has been determined by x-ray photoelectron diffraction (XPD).
Abstract: The surface polarity of a mercury cadmium telluride (MCT) (111) crystal surface has been determined by x‐ray photoelectron diffraction (XPD). Emission from the core levels of Hg, Cd, and Te gave reproducible photoelectron diffraction patterns with considerable fine structure. Comparisons between experiment and single scattering cluster calculations via R factors very well distinguished the different kinds of lattice site of Cd, Hg, and Te, and also permitted unambiguously assigning a cationic termination to the sample studied. This is thus a demonstration of the capability of XPD to study the type of termination involved at MCT and other compound semiconductor surfaces.
5 citations
01 Aug 1991
TL;DR: A review of the effects induced by ion implantation in silica glass and in SiO2 films on silicon with particular emphasis on optical modifications and new compound formation is presented in this paper.
Abstract: This paper presents a review of the effects induced by ion implantation in silica glass and in SiO2 films on silicon with particular emphasis on optical modifications and new compound formation. The formation of silicon oxynitrides and nitrogen oxides in surface layers as a consequence of nitrogen implantation was investigated by using different techniques as XPS, SIMS, and optical methods.
5 citations