A molecule containing a nitroamine redox center (2'-amino-4-ethynylphenyl-4'-ethynylphenyl-5'-nitro-1-benzenethiol) was used in the active self-assembled monolayer in an electronic device. Current-voltage measurements of the device exhibited negative differential resistance and an on-off peak-to-valley ratio in excess of 1000:1.

https://science.sciencemag.org/content/sci/286/5444/1550.full.pdf

Large On-Off Ratios and Negative Differential Resistance in a Molecular Electronic Device.

The authors formulate a new paradigm for computing with cellular automata (CAS) composed of arrays of quantum devices-quantum cellular automata. Computing in such a paradigm is edge driven. Input, output, and power are delivered at the edge of the CA array only; no direct flow of information or energy to internal cells is required. Computing in this paradigm is also computing with the ground state. The architecture is so designed that the ground-state configuration of the array, subject to boundary conditions determined by the input, yields the computational result. The authors propose a specific realization of these ideas using two-electron cells composed of quantum dots. The charge density in the cell is very highly polarized (aligned) along one of the two cell axes, suggestive of a two-state CA. The polarization of one cell induces a polarization in a neighboring cell through the Coulomb interaction in a very non-linear fashion. Quantum cellular automata can perform useful computing. The authors show that AND gates, OR gates, and inverters can be constructed and interconnected.

https://iopscience.iop.org/article/10.1088/0957-4484/4/1/004/pdf

Quantum Cellular Automata

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An Interferometric Modulator (IMod) is a microelectromechanical device for modulating light using interference. The colors of these devices may be determined in a spatial fashion, and their inherent color shift may be compensated for using several optical compensation mechanisms. Brightness, addressing, and driving of IMods may be accomplished in a variety of ways with appropriate packaging, and peripheral electronics which can be attached and/or fabricated using one of many techniques. The devices may be used in both embedded and directly perceived applications, the latter providing multiple viewing modes as well as a multitude of product concepts ranging in size from microscopic to architectural in scope.

Interferometric modulation of radiation

Palacin, Manuel, Raul Estevez, Joan Bertran, and Antonio Zorzano. Molecular Biology of Mammalian Plasma Membrane Amino Acid Transporters. Physiol. Rev. 78: 969–1054, 1998. — Molecular biology ente...

Molecular Biology of Mammalian Plasma Membrane Amino Acid Transporters

Generally and in one form of the invention this is a periodic surface filter comprising at least one element at a surface of the filter and electronic controls to change the optical characteristics of the element. Other methods and devices are disclosed.

Controllable surface filter

The combination of resonant-tunneling diodes and heterostructure field-effect transistors provides a versatile technology for implementing microwave digital and mixed-signal applications. Here we demonstrate and characterize the first monolithic flash analog-to-digital converter (ADC) in this technology. The first-pass ADC achieved 2.7 effective bits at 2 gigasamples per second (Gsps) for a 220-MHz input signal. The one-bit quantizer achieved a single-tone spurious free dynamic range greater than 40 dB at 2 Gsps for a 220-MHz single-tone input with dithering.

A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter

A highly miniaturized nanomechanical transistor switch is fabricated using a mechanical cantilever which creates a conductive path between two electrodes in its deflected state. In one embodiment, the cantilever is deflected by an electrostatic attraction arising from a voltage potential between the cantilever and a control electrode. In another embodiment, the cantilever is formed of a material with high magnetic permeability, and is deflected in response to complementary magnetic fields induced in the cantilever and in an adjacent electrode. The nanomechanical switch can be fabricated using well known semiconductor fabrication techniques, although semiconductor materials are not necessary for fabrication. The switch can rely upon physical contact between the cantilever and the adjacent electrode for current flow, or can rely upon sufficient proximity between the cantilever and the adjacent electrode to allow for tunneling current flow.

Nanomechanical switches and circuits

We have used capacitance measurements with a 1-microsecond voltage clamp technique to probe electrogenic ion-transporter interactions in giant excised membrane patches. The hydrophobic ion dipicrylamine was used to test model predictions for a simple charge-moving reaction. The voltage and frequency dependencies of the apparent dipicrylamine-induced capacitance, monitored by 1-mV sinusoidal perturbations, correspond to single charges moving across 76% of the membrane field at a rate of 9500 s-1 at 0 mV. For the cardiac Na,K pump, the combined presence of cytoplasmic ATP and sodium induces an increase of apparent membrane capacitance which requires the presence of extracellular sodium. The dependencies of capacitance changes on frequency, voltage, ATP, and sodium verify that phosphorylation enables a slow, 300- to 900-s-1, pump transition (the E1-E2 conformational change), which in turn enables fast, electrogenic, extracellular sodium binding reactions. For the GAT1 (gamma-aminobutyric acid,Na,Cl) cotransporter, expressed in Xenopus oocyte membrane, we find that chloride binding from the cytoplasmic side, and probably sodium binding from the extracellular side, results in a decrease of membrane capacitance monitored with 1- to 50-kHz perturbation frequencies. Evidently, ion binding by the GAT1 transporter suppresses an intrinsic fast charge movement which may originate from a mobility of charged residues of the transporter binding sites. The results demonstrate that fast capacitance measurements can provide new insight into electrogenic processes closely associated with ion binding by membrane transporters.

/pdf/membrane-transport-mechanisms-probed-by-capacitance-1tyeoldcjf.pdf

Membrane transport mechanisms probed by capacitance measurements with megahertz voltage clamp

The combination of resonant tunneling diodes (RTDs) and heterostructure field-effect transistors (HFETs) provides a versatile technology for implementing microwave digital and mixed-signal applications. Here we demonstrate the first monolithic flash RTD/HFET analog-to-digital converter (ADC). The first pass ADC achieved 2.7 effective bits at 2 GSps. The one bit quantizer achieved a single tone spurious free dynamic range (SFDR) of greater than 40 dB at 2 GSps for a 220 MHz single tone input with dithering.

Gary A. Frazier

Papers

Controllable surface filter

A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter

Nanomechanical switches and circuits

Membrane transport mechanisms probed by capacitance measurements with megahertz voltage clamp

A monolithic 4 bit 2 GSps resonant tunneling analog-to-digital converter