Proceedings ArticleDOI
A monolithic 4 bit 2 GSps resonant tunneling analog-to-digital converter
Tom P. E. Broekaert,Bobby Brar,J.P.A. van der Wagt,Alan Seabaugh,Theodore S. Moise,Francis J. Morris,Iii. E.A. Beam,Gary A. Frazier +7 more
- pp 187-190
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TLDR
The first monolithic flash RTD/HFET analog-to-digital converter (ADC) is demonstrated, demonstrating the combination of resonant tunneling diodes and heterostructure field-effect transistors for implementing microwave digital and mixed-signal applications.Abstract:
The combination of resonant tunneling diodes (RTDs) and heterostructure field-effect transistors (HFETs) provides a versatile technology for implementing microwave digital and mixed-signal applications. Here we demonstrate the first monolithic flash RTD/HFET analog-to-digital converter (ADC). The first pass ADC achieved 2.7 effective bits at 2 GSps. The one bit quantizer achieved a single tone spurious free dynamic range (SFDR) of greater than 40 dB at 2 GSps for a 220 MHz single tone input with dithering.read more
Citations
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Journal ArticleDOI
A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter
T.P.E. Broekaert,Bobby Brar,J.P.A. van der Wagt,Alan Seabaugh,Francis J. Morris,Theodore S. Moise,E.A. Beam,Gary A. Frazier +7 more
TL;DR: The first monolithic flash analog-to-digital converter (ADC) in this technology is demonstrated and characterized and the one-bit quantizer achieved a single-tone spurious free dynamic range greater than 40 dB at 2 Gsps for a 220-MHz single- Tone input with dithering.
Journal ArticleDOI
Tunneling-based SRAM
TL;DR: In this paper, a high-density low-power circuit approach for implementing static random access memory (SRAM) using low current density resonant tunneling diodes (RTDs) is described.
Proceedings ArticleDOI
A 1-GSPS CMOS flash A/D converter for system-on-chip applications
TL;DR: In this paper, the authors presented an ultrafast CMOS flash A/D converter design and performance, which utilizes the threshold inverter quantization (TIQ) technique to achieve high-speed in CMOS.
Journal ArticleDOI
RTD/CMOS nanoelectronic circuits: thin-film InP-based resonant tunneling diodes integrated with CMOS circuits
J.I. Bergman,Jae Joon Chang,Youngjoong Joo,B. Matinpour,J. Laskar,Nan Marie Jokerst,Martin A. Brooke,B. Brar +7 more
TL;DR: In this article, the authors demonstrate the first integrated resonant tunneling CMOS circuit, a clocked 1-bit comparator with a device count of six, compared with 21 in a comparable all-CMOS design.
Journal ArticleDOI
Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions
Niu Jin,Sung-Yong Chung,A.T. Rice,Paul R. Berger,Phillip E. Thompson,C. Rivas,Roger K. Lake,S. Sudirgo,J.J. Kempisty,B. Curanovic,Sean L. Rommel,Karl D. Hirschman,Santosh K. Kurinec,Peter H. Chi,David S. Simons +14 more
TL;DR: Si/SiGe resonant interband tunnel diodes employing /spl delta/-doping spikes that demonstrate negative differential resistance (NDR) at room temperature are presented in this paper.
References
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Journal ArticleDOI
Physics-based RTD current-voltage equation
TL;DR: In this paper, an analytic expression for the currentvoltage characteristics of resonant tunneling diodes is derived from basic principles, which is ideal for insertion into circuit simulation models.
Journal ArticleDOI
Esaki Diode High-Speed Logical Circuits
E. Goto,K. Murata,K. Nakazawa,K. Nakagawa,T. Moto-Oka,Y. Matsuoka,Y. Ishibashi,H. Ishida,T. Soma,E. Wada +9 more
TL;DR: Logical circuits using Esaki diodes, and which are based on a principle similar to parametron (subharmonic oscillator element) circuits, are described, and a delay-line dynamic memory and a nondestructive memory in matrix form are discussed.
Journal ArticleDOI
In0.53Ga0.47As/AlAs resonant tunnelling diodes with switching time of 1.5 ps
TL;DR: In this article, the authors reported the fastest switching time of 1.5 ps for In0.53Ga0.47As/AlAs resonant tunnelling diodes with 1.1 nm wide barriers and a peak current density of 6.8 × 105 A/cm2.
Proceedings ArticleDOI
An 8-GSa/s 8-bit ADC System
TL;DR: An analog to digital converter (ADC) system with 8 bit resolution and a sam le rate of 8 GSa/s is reported on, composed of 2 thick-fh hybrid substrates, each holding a silicon bipolar ADC chip and a custom CMOS memory chip.