Gema López

TL;DR: In this paper, the optimization of laser-fired contact (LFC) processing parameters, namely laser power and number of pulses, was studied based on the electrical resistance measurement of an aluminum single LFC point.

TL;DR: In this paper, a new strategy to passivate and contact the rear side of p-type c-Si solar cells based on the laser processing of aluminum oxide (Al2O3)/amorphous silicon carbide (SiCx) stacks before rear metallization was investigated.

TL;DR: The optimum thickness of the stack for photovoltaic applications is experimentally determined by minimizing the reflection losses over a wide wavelength range (300–1200 nm) without compromising the outstanding passivation properties of the Al2O3 films.

Abstract: We explore the potential of laser processing aluminium oxide (Al2O3)/amorphous silicon carbide (a-SiCx:H) stacks to be used at the rear surface of p-type crystalline silicon (c-Si) solar cells. For this stack, excellent quality surface passivation is measured with effective surface recombination velocities as low as 2 cm/s. By means of an infrared laser, the dielectric film is locally opened. Simultaneously, part of the aluminium in the Al2O3 film is introduced into the c-Si, creating p+ regions that allow ohmic contacts with low-surface recombination velocities. At optimum pitch, high-efficiency solar cells are achievable for substrates of 0.5–2.5 Ω cm.

TL;DR: In this article, a novel fabrication process of interdigitated back-contacted c-Si(n) solar cells based on laser-doped point contacts was proposed, where all the highly doped regions were entirely fabricated through UV laser processing of dielectric layers, avoiding the high temperature steps typically involved in conventional diffusion processes.