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Gholamreza Yazdi

Researcher at Linköping University

Publications -  24
Citations -  593

Gholamreza Yazdi is an academic researcher from Linköping University. The author has contributed to research in topics: Cathodoluminescence & Scanning electron microscope. The author has an hindex of 11, co-authored 23 publications receiving 543 citations. Previous affiliations of Gholamreza Yazdi include University of Shahrood.

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Surface functionalization and biomedical applications based on SiC

TL;DR: In this article, the authors review progress in biomedical and biosensor related research on silicon carbide (SiC) and show that less biofouling and platelet aggregation when exposed to blood can be taken advantage of in a variety of medical implantable materials while the robust semiconducting properties can be explored in surface functionalized bioelectronic devices.
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Novel material concepts of transducers for chemical and biosensors.

TL;DR: The results are intended to serve the realization of bioelectronic transducer devices based on SiC or GaN transistors with a ZnO gate layer with covalent attachment proven by XPS analysis and complementary electrical characterization impedance spectroscopy measurements were performed.
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Organosilane-functionalized wide band gap semiconductor surfaces

TL;DR: In this article, the surface functionalization of wide band gap semiconductors, SiC, ZnO, and GaN, with organosilane is reported, where the molecules are adsorbed on the surfaces through the silane groups with the free thiol groups molecularly oriented away from the surface.
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Sublimation growth of AlN crystals: Growth mode and structure evolution

TL;DR: In this article, the relationship between external growth parameters and the initial stages of growth with respect to growth mode and structure evolution has been investigated and the influence of certain impurities on the initially formed crystallites with regards to their shape, size and population has been considered.
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Aligned AlN nanowires by self-organized vapor–solid growth

TL;DR: It was found that the Nanowires change in thickness after they have reached a critical length, and this fact contributes to an understanding of the growth mechanism of AlN nanowires.