R
Roberto Fornari
Researcher at University of Parma
Publications - 227
Citations - 5811
Roberto Fornari is an academic researcher from University of Parma. The author has contributed to research in topics: Epitaxy & Thin film. The author has an hindex of 34, co-authored 217 publications receiving 4708 citations. Previous affiliations of Roberto Fornari include Humboldt State University & Institut für Kristallzüchtung.
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Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method
TL;DR: In this paper, temperature dependent conductivity and Hall effect measurements were performed on β-Ga2O3 crystals grown by the Czochralski method from an iridium crucible under a carbon dioxide containing atmosphere.
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Czochralski growth and characterization of β-Ga2O3 single crystals
Zbigniew Galazka,Reinhard Uecker,Klaus Irmscher,Martin Albrecht,Detlef Klimm,Mike Pietsch,Mario Brützam,Rainer Bertram,Steffen Ganschow,Roberto Fornari +9 more
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Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3
Mansour Mohamed,Klaus Irmscher,Christoph Janowitz,Zbigniew Galazka,Recardo Manzke,Roberto Fornari +5 more
TL;DR: In this paper, the Schottky barrier height of n-type β-Ga2O3 single crystals was determined by currentvoltage characteristics and high-resolution photoemission spectroscopy.
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High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
Wan Sik Hwang,Amit Verma,Hartwin Peelaers,Vladimir Protasenko,Sergei Rouvimov,Huili Grace Xing,Alan Seabaugh,Wilfried Haensch,Chris G. Van de Walle,Zbigniew Galazka,Martin Albrecht,Roberto Fornari,Debdeep Jena +12 more
TL;DR: In this paper, it is demonstrated that nanomembranes of the widebandgap semiconductor gallium oxide can be used as channels of transistors capable of switching high voltages, and at the same time can be integrated on any platform.
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Experimental electronic structure of In 2 O 3 and Ga 2 O 3
Christoph Janowitz,Valentina Scherer,Mansour Mohamed,A. Krapf,H. Dwelk,Recardo Manzke,Zbigniew Galazka,Reinhard Uecker,Klaus Irmscher,Roberto Fornari,Marcel Michling,Dieter Schmeißer,Justin R. Weber,Joel B. Varley,Chris G. Van de Walle +14 more
TL;DR: In this paper, the authors investigated In2O3 and Ga2o3, two binary oxides, which show the smallest and largest optical gaps among conventional n-type TCOs.