G
Gilles Horowitz
Researcher at École Polytechnique
Publications - 202
Citations - 18125
Gilles Horowitz is an academic researcher from École Polytechnique. The author has contributed to research in topics: Field-effect transistor & Organic semiconductor. The author has an hindex of 67, co-authored 202 publications receiving 17448 citations. Previous affiliations of Gilles Horowitz include École Normale Supérieure & Université Paris-Saclay.
Papers
More filters
Journal ArticleDOI
Organic Field‐Effect Transistors
TL;DR: In this paper, the performance of organic field effect transistors (OFETs) is examined in terms of field effect mobility and on-off current ratio, and the most prominent fabrication techniques are described.
Journal ArticleDOI
Organic thin film transistors: From theory to real devices
TL;DR: In this paper, the operating mode of organic thin-film transistor (OTFT) is analyzed in view of recent model development and the distribution of charges in the conducting channel and problems connected with contact resistance.
Journal ArticleDOI
Molecular engineering of organic semiconductors: design of self-assembly properties in conjugated thiophene oligomers
Francis Garnier,Abderrahim Yassar,R. Hajlaoui,Gilles Horowitz,F. Deloffre,Bernard Servet,Simone Ries,Patrick Alnot +7 more
TL;DR: In order to analyze the correlation between charge transport and structural properties in conjugated oligomers, sexithiophene, 6T, was substituted by hexyl groups, both on the terminal α positions and as pendant groups in the β position as mentioned in this paper.
Journal ArticleDOI
High-Performance Organic Field-Effect Transistors
Daniele Braga,Gilles Horowitz +1 more
TL;DR: In this article, a review of the state-of-the-art organic field effect transistors is presented, focusing on the problem of parameter extraction, limitations of the performance by the interfaces, which include the dielectric-semiconductor interface, and the injection and retrieval of charge carriers at the source and drain electrodes.
Journal ArticleDOI
Temperature and gate voltage dependence of hole mobility in polycrystalline oligothiophene thin film transistors
TL;DR: In this paper, a method was developed to extract the carrier mobility from an analysis of the transfer characteristics of polycrystalline sexithiophene (6 T) transistors at temperatures ranging from 10 to 300 K.