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Gilles Horowitz

Researcher at École Polytechnique

Publications -  202
Citations -  18125

Gilles Horowitz is an academic researcher from École Polytechnique. The author has contributed to research in topics: Field-effect transistor & Organic semiconductor. The author has an hindex of 67, co-authored 202 publications receiving 17448 citations. Previous affiliations of Gilles Horowitz include École Normale Supérieure & Université Paris-Saclay.

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Journal ArticleDOI

Organic Field‐Effect Transistors

Gilles Horowitz
- 01 Mar 1998 - 
TL;DR: In this paper, the performance of organic field effect transistors (OFETs) is examined in terms of field effect mobility and on-off current ratio, and the most prominent fabrication techniques are described.
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Organic thin film transistors: From theory to real devices

TL;DR: In this paper, the operating mode of organic thin-film transistor (OTFT) is analyzed in view of recent model development and the distribution of charges in the conducting channel and problems connected with contact resistance.
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Molecular engineering of organic semiconductors: design of self-assembly properties in conjugated thiophene oligomers

TL;DR: In order to analyze the correlation between charge transport and structural properties in conjugated oligomers, sexithiophene, 6T, was substituted by hexyl groups, both on the terminal α positions and as pendant groups in the β position as mentioned in this paper.
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High-Performance Organic Field-Effect Transistors

TL;DR: In this article, a review of the state-of-the-art organic field effect transistors is presented, focusing on the problem of parameter extraction, limitations of the performance by the interfaces, which include the dielectric-semiconductor interface, and the injection and retrieval of charge carriers at the source and drain electrodes.
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Temperature and gate voltage dependence of hole mobility in polycrystalline oligothiophene thin film transistors

TL;DR: In this paper, a method was developed to extract the carrier mobility from an analysis of the transfer characteristics of polycrystalline sexithiophene (6 T) transistors at temperatures ranging from 10 to 300 K.