G
Girish Malladi
Researcher at State University of New York System
Publications - 17
Citations - 372
Girish Malladi is an academic researcher from State University of New York System. The author has contributed to research in topics: Ion implantation & Thin film. The author has an hindex of 9, co-authored 17 publications receiving 303 citations. Previous affiliations of Girish Malladi include State University of New York Polytechnic Institute.
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Journal ArticleDOI
Transform-Limited Photons From a Coherent Tin-Vacancy Spin in Diamond.
Matthew E. Trusheim,Benjamin Pingault,Noel H. Wan,Mustafa Gündoğan,Lorenzo De Santis,Romain Debroux,Dorian Gangloff,Carola M. Purser,Kevin C. Chen,Michael Walsh,Joshua J. Rose,Jonas Nils Becker,Benjamin Lienhard,Eric Bersin,Ioannis Paradeisanos,Gang Wang,Dominika Lyzwa,Alejandro R.-P. Montblanch,Girish Malladi,Hassaram Bakhru,Andrea C. Ferrari,Ian A. Walmsley,Mete Atatüre,Dirk Englund +23 more
TL;DR: With a combination of coherent optical transitions and long spin coherence without dilution refrigeration, the SnV is a promising candidate for feasable and scalable quantum networking applications.
Journal ArticleDOI
Lead-related quantum emitters in diamond
Matthew E. Trusheim,Noel H. Wan,Kevin C. Chen,Christopher J. Ciccarino,Johannes Flick,Ravishankar Sundararaman,Girish Malladi,Eric Bersin,Michael Walsh,Benjamin Lienhard,Hassaram Bakhru,Prineha Narang,Dirk Englund +12 more
TL;DR: In this article, quantum emission from Pb-related color centers in diamond following ion implantation and high-temperature vacuum annealing was reported, which is consistent with the PbV center, making it a promising system for quantum network nodes.
Journal ArticleDOI
Scalable fabrication of coupled NV center - photonic crystal cavity systems by self-aligned N ion implantation
Tim Schröder,Michael Walsh,Jiabao Zheng,Sara Mouradian,Luozhou Li,Girish Malladi,Hassaram Bakhru,Ming Lu,Aaron Stein,Mikkel Heuck,Dirk Englund +10 more
TL;DR: In this article, the authors demonstrate spatially targeted implantation of nitrogen vacancy (NV) centers into the mode maximum of 2-d diamond photonic crystal cavities with quality factors up to 8000, achieving an average of 1.1 ± 0.2 NVs per cavity.
Journal Article
Lead-related quantum emitters in diamond
Christopher J. Ciccarino,Johannes Flick,Ravishankar Sundararaman,Girish Malladi,Michael Walsh,Hassaram Bakhru,Prineha Narang,Matthew E. Trusheim,Noel Heng Loon Wan,Kevin C. Chen,Eric Bersin,Benjamin Lienhard,Dirk Englund +12 more
Journal ArticleDOI
On the limits to Ti incorporation into Si using pulsed laser melting
Jay Mathews,Austin Akey,Daniel Recht,Girish Malladi,Harry Efstathiadis,Michael J. Aziz,Jeffrey M. Warrender +6 more
TL;DR: In this paper, the morphological stability limit for planar resolidification of Si:Ti was evaluated, and the results indicate that attaining sufficient concentrations of Ti in Si to reach the nominal Mott transition in morphologically stable plane-front solidification should occur only for velocities so high as to exceed the speed limits for crystalline regrowth in Si(111).