scispace - formally typeset
J

Jay Mathews

Researcher at University of Dayton

Publications -  53
Citations -  1713

Jay Mathews is an academic researcher from University of Dayton. The author has contributed to research in topics: Silicon & Band gap. The author has an hindex of 18, co-authored 48 publications receiving 1442 citations. Previous affiliations of Jay Mathews include Arizona State University & United States Department of the Army.

Papers
More filters
Journal ArticleDOI

Room-temperature sub-band gap optoelectronic response of hyperdoped silicon

TL;DR: In this article, a rapid and repeatable laser-based hyperdoping method incorporating supersaturated gold dopant concentrations on the order of 10(20) cm(-3) into a single-crystal surface layer was proposed to induce room-temperature infrared subband gap photoresponse in silicon.
Journal ArticleDOI

Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon

TL;DR: In this paper, direct-gap photoluminescence has been observed at room temperature in Ge1−ySny alloys grown on (001) Si substrates.
Journal ArticleDOI

Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications

TL;DR: In this paper, the first generation n-i-GeSn/p-Si(100) photodiode detectors with Ge0.98Sn0.02 active layers were fabricated under complementary metal oxide semiconductor compatible conditions.
Journal ArticleDOI

Electromagnetically induced transparency control in terahertz metasurfaces based on bright-bright mode coupling

TL;DR: In this paper, a planar terahertz metamaterial (MM) comprised of three-gap split-ring resonators is proposed and implemented numerically to dynamically tune the EIT window by incorporating photosensitive silicon pads in the split gap region of the resonators.
Journal ArticleDOI

Direct gap electroluminescence from Si/Ge1−ySny p-i-n heterostructure diodes

TL;DR: In this article, a superlinear dependence on the injection current was modeled using a Van Roosbroeck-Shockley expression for the emission intensity of the EL spectra from Si/Ge 1−ySny heterostructure diodes.