J
Jay Mathews
Researcher at University of Dayton
Publications - 53
Citations - 1713
Jay Mathews is an academic researcher from University of Dayton. The author has contributed to research in topics: Silicon & Band gap. The author has an hindex of 18, co-authored 48 publications receiving 1442 citations. Previous affiliations of Jay Mathews include Arizona State University & United States Department of the Army.
Papers
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Journal ArticleDOI
Room-temperature sub-band gap optoelectronic response of hyperdoped silicon
Jonathan P. Mailoa,Austin Akey,Christie Simmons,David Hutchinson,Jay Mathews,Joseph Sullivan,Daniel Recht,Mark T. Winkler,James Williams,Jeffrey M. Warrender,Peter D. Persans,Michael J. Aziz,Tonio Buonassisi +12 more
TL;DR: In this article, a rapid and repeatable laser-based hyperdoping method incorporating supersaturated gold dopant concentrations on the order of 10(20) cm(-3) into a single-crystal surface layer was proposed to induce room-temperature infrared subband gap photoresponse in silicon.
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Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon
TL;DR: In this paper, direct-gap photoluminescence has been observed at room temperature in Ge1−ySny alloys grown on (001) Si substrates.
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Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications
TL;DR: In this paper, the first generation n-i-GeSn/p-Si(100) photodiode detectors with Ge0.98Sn0.02 active layers were fabricated under complementary metal oxide semiconductor compatible conditions.
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Electromagnetically induced transparency control in terahertz metasurfaces based on bright-bright mode coupling
Riad Yahiaoui,Joshua A. Burrow,S. M. Mekonen,Andrew Sarangan,Jay Mathews,Imad Agha,Thomas A. Searles +6 more
TL;DR: In this paper, a planar terahertz metamaterial (MM) comprised of three-gap split-ring resonators is proposed and implemented numerically to dynamically tune the EIT window by incorporating photosensitive silicon pads in the split gap region of the resonators.
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Direct gap electroluminescence from Si/Ge1−ySny p-i-n heterostructure diodes
TL;DR: In this article, a superlinear dependence on the injection current was modeled using a Van Roosbroeck-Shockley expression for the emission intensity of the EL spectra from Si/Ge 1−ySny heterostructure diodes.