Giuliano Vescovi

TL;DR: In this paper, a GaAs nanowire array solar cell with an independently verified solar energy conversion efficiency of 15.3% and open-circuit voltage of 0.906 V under AM1.5g solar illumination at 1-sun intensity has been fabricated.

TL;DR: High-resolution cathodoluminescence on cleaved nanowires allows the location with high precision of the origin of different emitted wavelengths and demonstrates that the blue peak originates from the emission of the radial quantum well on the m-planes, whereas the green peak arises from the In-rich region at the junction between them-planes and the semipolar planes.

TL;DR: The interface between the nanowire core and the radially grown layer is shown to produce in some cases a transitory EBIC signal, which is interpreted as a consequence of the In and Al gradients in the quantum well and in the electron blocking layer, which influence the carrier extraction efficiency.

TL;DR: In this article, a GaAs nanowire array solar cell with an independently verified solar energy conversion efficiency of 15.3% and open circuit voltage of 0.906 V under AM 1.5g solar illumination at 1 sun intensity has been fabricated by Sol Voltaics AB.

TL;DR: The direct observation of the diffusion of carriers in graded InGaN/GaN quantum wells in a nanowire concludes that this diffusion process is thermally activated, and the results therefore confirm the potential of core-shell nanowires for lighting devices.