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P. Lavenus

Researcher at Université Paris-Saclay

Publications -  33
Citations -  988

P. Lavenus is an academic researcher from Université Paris-Saclay. The author has contributed to research in topics: Nanowire & Resonator. The author has an hindex of 12, co-authored 32 publications receiving 901 citations. Previous affiliations of P. Lavenus include Northwestern University & Centre national de la recherche scientifique.

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InGaN/GaN Core–Shell Single Nanowire Light Emitting Diodes with Graphene-Based P-Contact

TL;DR: High-resolution cathodoluminescence on cleaved nanowires allows the location with high precision of the origin of different emitted wavelengths and demonstrates that the blue peak originates from the emission of the radial quantum well on the m-planes, whereas the green peak arises from the In-rich region at the junction between them-planes and the semipolar planes.
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Integrated Photonic Platform Based on InGaN/GaN Nanowire Emitters and Detectors

TL;DR: MOVPE-grown (metal-organic vapor-phase epitaxy) InGaN/GaN p-n junction core-shell nanowires have been used for device fabrication to achieve a good spectral matching between the emission wavelength and the detection range.
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GaN nanowire ultraviolet photodetector with a graphene transparent contact

TL;DR: In this paper, the fabrication of graphene contact to GaN nanowire ensemble and the demonstration of photodetectors using chemical vapor deposition-grown few-layered graphene as a transparent electrode were reported.
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Characterization and modeling of a ZnO nanowire ultraviolet photodetector with graphene transparent contact

TL;DR: In this article, a ZnO nanowire ultraviolet photodetector with a top transparent electrode made of a few-layered graphene sheet is presented, which exhibits a peak responsivity at 370nm wavelength and shows a sub bandgap response down to 415nm explained by an Urbach tail with a characteristic energy of 83'meV. The detector is shown to be visible-blind and to present a responsivity larger than 104'A/W in the near ultraviolet range.
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Core-shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping.

TL;DR: The interface between the nanowire core and the radially grown layer is shown to produce in some cases a transitory EBIC signal, which is interpreted as a consequence of the In and Al gradients in the quantum well and in the electron blocking layer, which influence the carrier extraction efficiency.