Showing papers by "Guido Groeseneken published in 1985"

Correlation between 1/f noise and interface state density at the Fermi level in field‐effect transistors

Abstract: New evidence is given for the validity of the number fluctuation model in explaining the 1/f noise behavior of field‐effect transistors and for the direct proportionality between the oxide trap density and the interface state density at the Fermi level. This evidence is obtained from the determination of the energy distribution of the interface states in small size metal‐nitride‐oxide‐silicon transistors by the modified charge pumping technique.