G
Guo-Jian Yang
Researcher at Beijing Normal University
Publications - 56
Citations - 867
Guo-Jian Yang is an academic researcher from Beijing Normal University. The author has contributed to research in topics: Quantum entanglement & Qubit. The author has an hindex of 16, co-authored 56 publications receiving 782 citations.
Papers
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Journal ArticleDOI
Generation and discrimination of a type of four-partite entangled state
Xin-Wen Wang,Guo-Jian Yang +1 more
TL;DR: Yeo et al. as mentioned in this paper presented a simple scheme for generating a genuine four-qubit entangled state in an ion-trap system and demonstrated how to discriminate between the 16 basis states.
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High-capacity quantum secure direct communication with two-photon six-qubit hyperentangled states
FangZhou Wu,Guo-Jian Yang,Haibo Wang,Jun Xiong,Faris Alzahrani,Aatef Hobiny,Fu-Guo Deng,Fu-Guo Deng +7 more
TL;DR: In this paper, the authors proposed a one-way quantum secure direct communication (QSDC) protocol with two-photon six-qubit hyper-entangled Bell states in two longitudinal momentum and polarization degrees of freedom (DOF) of photon pairs.
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Heralded quantum repeater for a quantum communication network based on quantum dots embedded in optical microcavities
Tao Li,Guo-Jian Yang,Fu-Guo Deng +2 more
TL;DR: A heralded quantum repeater protocol based on the general interface between the circularly polarized photon and the quantum dot embedded in a double-sided optical microcavity was proposed in this article.
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Hybrid economical telecloning of equatorial qubits and generation of multipartite entanglement
Xin-Wen Wang,Guo-Jian Yang +1 more
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Magnetoresistance effect in a both magnetically and electrically modulated nanostructure
Mao-Wang Lu,Guo-Jian Yang +1 more
TL;DR: In this paper, a magnetoresistance device in a both magnetically and electrically modulated two-dimensional electron gas was proposed, which can be realized experimentally by the deposition, on the top and bottom of a semiconductor heterostructure, of two parallel metallic ferromagnetic strips under an applied voltage.