Three parallel algorithms for classical molecular dynamics are presented. The first assigns each processor a fixed subset of atoms; the second assigns each a fixed subset of inter-atomic forces to compute; the third assigns each a fixed spatial region. The algorithms are suitable for molecular dynamics models which can be difficult to parallelize efficiently—those with short-range forces where the neighbors of each atom change rapidly. They can be implemented on any distributed-memory parallel machine which allows for message-passing of data between independently executing processors. The algorithms are tested on a standard Lennard-Jones benchmark problem for system sizes ranging from 500 to 100,000,000 atoms on several parallel supercomputers--the nCUBE 2, Intel iPSC/860 and Paragon, and Cray T3D. Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems. For large problems, the spatial algorithm achieves parallel efficiencies of 90% and a 1840-node Intel Paragon performs up to 165 faster than a single Cray C9O processor. Trade-offs between the three algorithms and guidelines for adapting them to more complex molecular dynamics simulations are also discussed.

Fast parallel algorithms for short-range molecular dynamics

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

[신간의 별자리x] 우리/미술, 그리고 ‘슬픔의 박물관’

The long-standing popularity of thermoelectric materials has contributed to the creation of various thermoelectric devices and stimulated the development of strategies to improve their thermoelectric performance. In this review, we aim to comprehensively summarize the state-of-the-art strategies for the realization of high-performance thermoelectric materials and devices by establishing the links between synthesis, structural characteristics, properties, underlying chemistry and physics, including structural design (point defects, dislocations, interfaces, inclusions, and pores), multidimensional design (quantum dots/wires, nanoparticles, nanowires, nano- or microbelts, few-layered nanosheets, nano- or microplates, thin films, single crystals, and polycrystalline bulks), and advanced device design (thermoelectric modules, miniature generators and coolers, and flexible thermoelectric generators). The outline of each strategy starts with a concise presentation of their fundamentals and carefully selected examples. In the end, we point out the controversies, challenges, and outlooks toward the future development of thermoelectric materials and devices. Overall, this review will serve to help materials scientists, chemists, and physicists, particularly students and young researchers, in selecting suitable strategies for the improvement of thermoelectrics and potentially other relevant energy conversion technologies.

Advanced Thermoelectric Design: From Materials and Structures to Devices

Applications of Phosphorene and Black Phosphorus in Energy Conversion and Storage Devices

Thermal Conductivity of Amorphous Materials

Monolayer SnP3 is a novel two-dimensional (2D) semiconductor material with high carrier mobility and large optical absorption coefficient, implying its potential applications in the photovoltaic and thermoelectric (TE) fields. Herein, we report on the TE properties of monolayer SnP3 utilizing first principles density functional theory (DFT) together with semiclassical Boltzmann transport theory. Results indicate that it exhibits a low lattice thermal conductivity of ∼4.97 W m-1 K-1 at room temperature, mainly originating from its small average acoustic group velocity (∼1.18 km s-1), large Gruneisen parameters (∼7.09), strong dipole-dipole interactions, and strong phonon-phonon scattering. A large in-plane charge transfer is observed, which results in a non-ignorable bipolar effect on the lattice thermal conductivity. The exhibited mixed mode between in-plane and out-of-plane vibrations enhances the complexity of the phonon phase space, which enhances the possibility of phonon scattering processes and results in suppression of thermal conductivity. A highly twofold degeneracy appearing at the K point gives a high Seebeck coefficient. Our calculated figure of merit (ZT) for optimal p-type doping at 500 K can approach 3.46 along the armchair direction, which is better than the theoretical value of 1.94 reported in the well-known TE material SnSe. Our studies here shed light on monolayer SnP3 in use as a TE material and supply insights to further optimize the TE properties in similar systems.

Monolayer SnP3: an excellent p-type thermoelectric material

We investigate the size and edge roughness dependence on thermal conductivity of monolayer MoS2 (MLMoS2) by phonon Boltzmann transport equation combined with relaxation time approximation. The relative contribution of spectral phonons to thermal conductivity is explored, and we compared the characteristics of phonon transport with those in single layer graphene (SLG), which is a representative two-dimensional material. Quite different from SLG, because of the ultra-short intrinsic phonon mean free path, the thermal conductivity of MLMoS2 ribbons is size and roughness insensitive. The LA phonons have the major contribution to thermal conductivity of MLMoS2, and the ZA phonons in MLMoS2 have high relative contribution to thermal conductivity. The relative contribution to thermal conductivity from both high frequency and low frequency phonons in MLMoS2 is lower than that in SLG. The underlying mechanism of these distinct characteristics results from the different phonon dispersions and anharmonic characteristic between MLMoS2 and SLG.

Phonon thermal conductivity of monolayer MoS2: A comparison with single layer graphene

Two-dimensional silicon phononic crystals have attracted extensive research interest for thermoelectric applications due to their reproducible low thermal conductivity and sufficiently good electrical properties. For thermoelectric devices in high-temperature environment, the coherent phonon interference is strongly suppressed; therefore phonon transport in the incoherent regime is critically important for manipulating their thermal conductivity. On the basis of perturbation theory, we present herein a novel phonon scattering process from the perspective of bond order imperfections in the surface skin of nanostructures. We incorporate this strongly frequency-dependent scattering rate into the phonon Boltzmann transport equation and reproduce the ultra low thermal conductivity of holey silicon nanostructures. We reveal that the remarkable reduction of thermal conductivity originates not only from the impediment of low-frequency phonons by normal boundary scattering, but also from the severe suppression of high-frequency phonons by surface bond order imperfections scattering. Our theory not only reveals the role of the holey surface on the phonon transport, but also provide a computation tool for thermal conductivity modification in nanostructures through surface engineering. A phonon scattering process on the surface of phononic crystals can explain their ultra-low thermal conductivity. Two-dimensional silicon phononic crystals are promising for thermoelectric applications, as the periodic arrangement of holes allows for significant reduction of their thermal conductivity. A team from Hunan University of Science and Technology and Xiangtan Universities in China, and the Institute of High Performance Computing in Singapore, manage to model the values reported experimentally by incorporating a phonon scattering mechanism, rooted to the bond imperfection on the surface of the nanostructure. As the bonds towards the surface grow shorter and therefore stronger, they perturb the local potential, and suppress the high-frequency phonons. Low-frequency phonons, on the other hand are suppressed by normal boundary scattering. The authors conclude that these two actions lead to the ultra-low thermal conductivity values, and predict that further reduction can be achieved by roughening the hole walls in the phononic crystal.

Ultra-low thermal conductivity of two-dimensional phononic crystals in the incoherent regime

We theoretically investigate the phonon scattering by vacancies, including the impacts of missing mass and linkages () and the variation of the force constant of bonds associated with vacancies () by the bond-order-length-strength correlation mechanism. We find that in bulk crystals, the phonon scattering rate due to change of force constant is about three orders of magnitude lower than that due to missing mass and linkages . In contrast to the negligible in bulk materials, in two-dimensional materials can be 3–10 folds larger than . Incorporating this phonon scattering mechanism to the Boltzmann transport equation derives that the thermal conductivity of vacancy defective graphene is severely reduced even for very low vacancy density. High-frequency phonon contribution to thermal conductivity reduces substantially. Our findings are helpful not only to understand the severe suppression of thermal conductivity by vacancies, but also to manipulate thermal conductivity in two-dimensional materials by phononic engineering.

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Guofeng Xie

Papers

Thermal Conductivity of Amorphous Materials

Monolayer SnP3: an excellent p-type thermoelectric material

Phonon thermal conductivity of monolayer MoS2: A comparison with single layer graphene

Ultra-low thermal conductivity of two-dimensional phononic crystals in the incoherent regime

A Bond-order Theory on the Phonon Scattering by Vacancies in Two-dimensional Materials