The emerging field of plasmonics has yielded methods for guiding and localizing light at the nanoscale, well below the scale of the wavelength of light in free space. Now plasmonics researchers are turning their attention to photovoltaics, where design approaches based on plasmonics can be used to improve absorption in photovoltaic devices, permitting a considerable reduction in the physical thickness of solar photovoltaic absorber layers, and yielding new options for solar-cell design. In this review, we survey recent advances at the intersection of plasmonics and photovoltaics and offer an outlook on the future of solar cells based on these principles.

Plasmonics for improved photovoltaic devices

The Al x Ga1−x As/GaAs heterostructure system is potentially useful material for high‐speed digital, high‐frequency microwave, and electro‐optic device applications Even though the basic Al x Ga1−x As/GaAs heterostructure concepts are understood at this time, some practical device parameters in this system have been hampered by a lack of definite knowledge of many material parameters Recently, Blakemore has presented numerical and graphical information about many of the physical and electronic properties of GaAs [J S Blakemore, J Appl Phys 5 3, R123 (1982)] The purpose of this review is (i) to obtain and clarify all the various material parameters of Al x Ga1−x As alloy from a systematic point of view, and (ii) to present key properties of the material parameters for a variety of research works and device applications A complete set of material parameters are considered in this review for GaAs, AlAs, and Al x Ga1−x As alloys The model used is based on an interpolation scheme and, therefore, necessitates known values of the parameters for the related binaries (GaAs and AlAs) The material parameters and properties considered in the present review can be classified into sixteen groups: (1) lattice constant and crystal density, (2) melting point, (3) thermal expansion coefficient, (4) lattice dynamic properties, (5) lattice thermal properties, (6) electronic‐band structure, (7) external perturbation effects on the band‐gap energy, (8) effective mass, (9) deformation potential, (10) static and high‐frequency dielectric constants, (11) magnetic susceptibility, (12) piezoelectric constant, (13) Frohlich coupling parameter, (14) electron transport properties, (15) optical properties, and (16) photoelastic properties Of particular interest is the deviation of material parameters from linearity with respect to the AlAs mole fraction x Some material parameters, such as lattice constant, crystal density, thermal expansion coefficient, dielectric constant, and elastic constant, obey Vegard’s rule well Other parameters, eg, electronic‐band energy, lattice vibration (phonon) energy, Debye temperature, and impurity ionization energy, exhibit quadratic dependence upon the AlAs mole fraction However, some kinds of the material parameters, eg, lattice thermal conductivity, exhibit very strong nonlinearity with respect to x, which arises from the effects of alloy disorder It is found that the present model provides generally acceptable parameters in good agreement with the existing experimental data A detailed discussion is also given of the acceptability of such interpolated parameters from an aspect of solid‐state physics Key properties of the material parameters for use in research work and a variety of Al x Ga1−x As/GaAs device applications are also discussed in detail

GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications

Adding optical functionality to a silicon microelectronic chip is one of the most challenging problems of materials research. Silicon is an indirect-bandgap semiconductor and so is an inefficient emitter of light. For this reason, integration of optically functional elements with silicon microelectronic circuitry has largely been achieved through the use of direct-bandgap compound semiconductors. For optoelectronic applications, the key device is the light source--a laser. Compound semiconductor lasers exploit low-dimensional electronic systems, such as quantum wells and quantum dots, as the active optical amplifying medium. Here we demonstrate that light amplification is possible using silicon itself, in the form of quantum dots dispersed in a silicon dioxide matrix. Net optical gain is seen in both waveguide and transmission configurations, with the material gain being of the same order as that of direct-bandgap quantum dots. We explain the observations using a model based on population inversion of radiative states associated with the Si/SiO2 interface. These findings open a route to the fabrication of a silicon laser.

Optical gain in silicon nanocrystals

UV-Visible ار راد ن .د TiO2 ( تیفرظ راون مان هب نورتکلا یاراد یژرنا زارت لماش VB و ) رگید زارت ی یژرنا اب ( ییاناسر راون مان هب نورتکلا زا یلاخ و رتلااب VB یم ) .دشاب ت ود نیا نیب یژرنا توافت یژرنا فاکش زار ، پگ دناب هدیمان یم .دوش هک ینامز زا نورتکلا لاقتنا VB هب VB یم ماجنا دریگ ، TiO2 اب ودح یژرنا بذج د ev 2 / 3 ، نورتکلا تفج کی دیلوت یم هرفح .دیامن و نورتکلا هرفح ی نا اب هدش دیلوت یم کرتشم حطس هب لاقت ثعاب دناوت شنکاو ماجنا اه یی ددرگ . TiO2 دربراک ،دراد یدایز یاه هلمج زا یم ناوت اوه یگدولآ هیفصت یارب (CO2) و بآ و ... نآ زا هدافتسا درک .

Advanced Nanoarchitectures for Solar Photocatalytic Applications

When a molecule absorbs a photon of appropriate energy, a chain of photophysical events ensues, such as internal conversion or vibrational relaxation (loss of energy in the absence of light emission), fluorescence, intersystem crossing (from singlet state to a triplet state) and phosphorescence, as shown in the Jablonski diagram for organic molecules (Fig. 1). Each of the processes occurs with a certain probability, characterized by decay rate constants (k). It can be shown that the average length of time τ for the set of molecules to decay from one state to another is reciprocally proportional to the rate of decay: τ = 1/k. This average length of time is called the mean lifetime, or simply lifetime. It can also be shown that the lifetime of a photophysical process is the time required by a population of N electronically excited molecules to be reduced by a factor of e. Correspondingly, the fluorescence lifetime is the time required by a population of excited fluorophores to decrease exponentially to N/e via the loss of energy through fluorescence and other non-radiative processes. The lifetime of photophycal processes vary significantly from tens of femotoseconds for internal conversion1,2 to nanoseconds for fluorescence and microseconds or seconds for phosphorescence.1






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Figure 1


Jablonski diagram and a timescale of photophysical processes for organic molecules.

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Fluorescence Lifetime Measurements and Biological Imaging

Colloidal nanocrystal quantum dots with a band gap in the near infra-red have potential application as the emitters for telecommunications or in vivo imaging, or as the photo-absorbing species in next generation solar cells or photodetectors. However, electro- and photoluminescence yields and the efficiency with which photo-generated charges can be extracted from quantum dots depend on the total rate of recombination, which can be dominated by surface-mediated processes. In this study, we use ultrafast transient absorption spectroscopy to characterise the recombination dynamics of photo-generated charges in InAs/ZnSe nanocrystal quantum dots. We find that recombination is dominated by rapid, sub-nanosecond transfer of conduction band electrons to surface states. For the size of dots studied, we also find no evidence of significant multiple exciton generation for photon energies up to 3.2 times the band gap, in agreement with our theoretical modelling.

Ultrafast exciton dynamics in InAs/ZnSe nanocrystal quantum dots

Frequency-dependent hopping conductivity between silicon nanocrystallites : application to porous silicon

We present theoretical simulations of the Scanning Tunneling Microscopy (STM) of thienylenevinylene oligomers physisorbed on a Si(100) surface. Calculations based on a tight-binding method including self-consistency for the molecule are used to predict STM imaging and spectroscopy. We obtain that the STM images in the constant current mode are characterized by several bumps which do not coincide with the thiophene rings in the molecule but reveal the dimer rows below the molecule. We show that this behavior does not depend on the size of the molecule, on its orientation with respect to the dimer rows, or on the buckling of the dimers. These results are discussed and compared with available experimental data.

Scanning tunneling microscopy and spectroscopy of conjugated oligomers weakly bonded to Si(100) surfaces: A theoretical study

The synthesis of PbSe nanocrystals by electrodeposition on Au(111) is discussed and it is shown that the characteristics of nucleation and growth determine the electrical and optical properties of the nanocrystals. Electrodeposition of PbSe on gold occurs by a two-dimensional nucleation and growth mechanism. This results in strongly flattened structures. These nanocrystals have a staircase-like electron density of states, typical for a quantum well, and the dielectric function of the PbSe nanocrystals shows a marked dependence on the nanocrystal height. Using electronic structure calculations, we demonstrate that these observations are due to quantum confinement in one direction, in agreement with the shape of the nanocrystals.

https://iopscience.iop.org/article/10.1088/0957-4484/16/4/001/pdf

Electrodeposited nanocrystalline PbSe quantum wells : synthesis, electrical and optical properties

Several recent theoretical advances concerning semiconductor quantum dots are reviewed. First of all, the effect of the quantum confinement on the energy gap is revisited on the basis of GW and Bethe-Salpeter calculations, showing that the excitonic gap is practically equal to the ordinary eigenvalue gap of single-particle approximations. The second part demonstrates that it is now possible to calculate the conductance peaks for the tunnelling current through a nanostructure. Finally, we discuss in some detail the concept of a macroscopic dielectric constant for nanostructures, showing that, except for a thin surface layer, the local dielectric constant still keeps its bulk value down to pretty small nanostructures.

Guy Allan

Papers

Ultrafast exciton dynamics in InAs/ZnSe nanocrystal quantum dots

Frequency-dependent hopping conductivity between silicon nanocrystallites : application to porous silicon

Scanning tunneling microscopy and spectroscopy of conjugated oligomers weakly bonded to Si(100) surfaces: A theoretical study

Electrodeposited nanocrystalline PbSe quantum wells : synthesis, electrical and optical properties

Confinement effects and tunnelling through quantum dots.