The perovskite manganites with generic formula RE1?xAExMnO3 (RE = rare earth, AE = Ca, Sr, Ba and Pb) have drawn considerable attention, especially following the discovery of colossal magnetoresistance (CMR). The most fundamental property of these materials is strong correlation between structure, transport and magnetic properties. They exhibit extraordinary large magnetoresistance named CMR in the vicinity of the insulator?metal/paramagnetic?ferromagnetic transition at relatively large applied magnetic fields. However, for applied aspects, occurrence of significant CMR at low applied magnetic fields would be required. This review consists of two sections: in the first section we have extensively reviewed the salient features, e.g.?structure, phase diagram, double-exchange mechanism, Jahn?Teller effect, different types of ordering and phase separation of CMR manganites. The second is devoted to an overview of experimental results on CMR and related magnetotransport characteristics at low magnetic fields for various doped manganites having natural grain boundaries such as polycrystalline, nanocrystalline bulk and films, manganite-based composites and intrinsically layered manganites, and artificial grain boundaries such as bicrystal, step-edge and laser-patterned junctions. Some other potential magnetoresistive materials, e.g.?pyrochlores, chalcogenides, ruthenates, diluted magnetic semiconductors, magnetic tunnel junctions, nanocontacts etc, are also briefly dealt with. The review concludes with an overview of grain-boundary-induced low field magnetotransport behavior and prospects for possible applications.

https://iopscience.iop.org/article/10.1088/0953-8984/20/27/273201/pdf

Low field magnetotransport in manganites

The perovskite manganites of general formula RE_1-xAe_xMnO_3 (RE= rare earth,AE=Ca, Sr, Ba and Pb)have drawn considerable attention, especially following the discovery of colossal magnetoresistance (CMR). They exhibit extraordinary large magnetoresistance pronounced as CMR in the vicinity of insulator-metal/paramagnetic-ferromagnetic transition at a relatively large applied magnetic fields. However, for applied aspectes, occurence of significant CMR at low applied magnetic fields would be required. This review consists of of two sections: In the first section we have extensively reviewed the salient features e.g. structure, phase diagram, double exchange mechansim, Jahn Teller effect, different types of ordering and phase separation of CMR mangnaites. The second is devoted to an overview of experimental results on CMR and related magnetotransport characteristics at low magnetic fields for doped manganites such as polycrystalline La_0.67Ca_0.33MnO_3 films, Ag admixed La_0.67Ca_0.33MnO_3 films, polycrystalline (La_0.7Ca_0.2Ba_0.1MnO_3)and epitaxial (La_0.67Ca_0.33MnO_3) films on different substrates, nanophasic La_0.7Ca_0.3MnO_3, mangnaite-polymer composites (La_0.7Ba_0.2Sr_0.1MnO_3-PMMA and La_0.67Ca_0.33MnO_3-PMMA)and double layered polycrystalline (La_1.4Ca_1.6-xBa_xMn_2O_7) and films (La_1.4Ca_1.6Mn_2O_7). Some other potential magnetoresistive materials e.g. pyrochlores, chalcogenides, ruthenates, diluted magnetic semiconductors, magnetic tunnel junctions, nanocontacts etc have aslo been briefly dealt with. The review concludes with the summary of results for low field magnetotransport behaviour and prospectes for applications.

Low Field Magnetotransport in Manganites

Epitaxial La0.7Ca0.3MnO3 (LCMO) thin films of a thickness ∼170 nm were grown on (001) LaAlO3 (LAO) and (001) SrTiO3 (STO) substrates by pulsed laser deposition. Transmission electron microscopy and associated techniques have been applied to investigate the microstructures introduced by lattice mismatch that are responsible for the observed differences in properties between these two films. Numerous secondary phase rods were observed in both films. For the LCMO/LAO film, Ca-deficient secondary-phase rods originated in the film after a thickness of about 25 nm and were found to be responsible for relieving in-plane compressive stress during the island growth. In the case of STO substrate, however, almost all of secondary-phase rods initiated at the film–substrate interface. The lattice mismatch between LCMO and STO is relaxed into regions of good coherent fit separated by such secondary phases, possibly resulting from interfacial reaction. The two types of substrates lead to the formation of two different c...

Microstructure of epitaxial La0.7Ca0.3MnO3 thin films grown on LaAlO3 and SrTiO3

We have developed a single transistor ferroelectric memory using stack gate PZT/Al/sub 2/O/sub 3/ structure. For the same /spl sim/40 /spl Aring/ dielectric thickness, the PZT/Al/sub 2/O/sub 3//Si gate dielectric has much better C-V characteristics and larger threshold voltage shift than those of PZT/SiO/sub 2//Si. Besides, the ferroelectric MOSFET also shows a large output current difference between programmed on state and erased off state. The <100 us erase time is much faster than that of flash memory where the switching time is limited by erase time.

https://ir.nctu.edu.tw:443/bitstream/11536/29531/1/000169452500010.pdf

Stack gate PZT/Al 2 O 3 one transistor ferroelectric memory

The electro-optical properties of lead zirconate titanate (PZT) thin films depend strongly on the quality and crystallographic orientation of the thin films. We demonstrate a novel method to grow highly textured PZT thin films on silicon using the chemical solution deposition (CSD) process. We report the use of ultrathin (5–15 nm) lanthanide (La, Pr, Nd, Sm) based intermediate layers for obtaining preferentially (100) oriented PZT thin films. X-ray diffraction measurements indicate preferentially oriented intermediate Ln2O2CO3 layers providing an excellent lattice match with the PZT thin films grown on top. The XRD and scanning electron microscopy measurements reveal that the annealed layers are dense, uniform, crack-free and highly oriented (>99.8%) without apparent defects or secondary phases. The EDX and HRTEM characterization confirm that the template layers act as an efficient diffusion barrier and form a sharp interface between the substrate and the PZT. The electrical measurements indicate a dielec...

https://biblio.ugent.be/publication/6915560/file/6918725.pdf

Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices.

Highly (100) oriented Pb(Zr053Ti047)O3 (PZT) films were prepared on Si substrates with ultrathin SiO2 buffer layer by pulsed laser deposition Hysteresis measurements show that saturation polarization, remnant polarization and coercive field of the films reach 26 μC/cm2, 10 μC/cm2 and 70 kV/cm, respectively The thickness of SiO2 buffer layer is found to play a significant role on phase purity and orientation of PZT as well as the prevention of interdiffusion It is also found that the grain size and the interdiffusion between PZT and Si are the key factors for the ferroelectric properties of the films, which are discussed together with the synthesis condition in detail

Growth and polarization features of highly (100) oriented Pb(Zr0.53Ti0.47)O3 films on Si with ultrathin SiO2 buffer layer

Formation of an ordered surface structure in La0.5Ca0.5MnO3 films due to the mismatch of the thermal expansion coefficient between the film and the substrate has been investigated. The surface pattern consists of grain chains located on regular orthogonal cracks. The cracks serve as weak-link grain boundaries, and unusually enhanced low-field magnetoresistance (−14.4% in 400 Oe at 90 K) has been observed, which may be explained by spin-polarized tunneling across the grain boundaries.

H. J. Tao

Papers

Growth and polarization features of highly (100) oriented Pb(Zr0.53Ti0.47)O3 films on Si with ultrathin SiO2 buffer layer

Surface pattern and large low-field magnetoresistance in La0.5Ca0.5MnO3 films