H
Hannah S. Alpert
Researcher at Stanford University
Publications - 13
Citations - 155
Hannah S. Alpert is an academic researcher from Stanford University. The author has contributed to research in topics: Gallium nitride & Photodetector. The author has an hindex of 6, co-authored 12 publications receiving 89 citations. Previous affiliations of Hannah S. Alpert include Yale University.
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Journal ArticleDOI
Stellar populations of BCGs, close companions and intracluster light in Abell 85, Abell 2457 and IIZw108
TL;DR: In this paper, an integral field (IFU) spectroscopic survey of a 75kpc region around three Brightest Cluster Galaxies (BCGs), combining over 100 IFU fibres to study the intracluster light (ICL), was presented.
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Clocking the formation of today’s largest galaxies: wide field integral spectroscopy of brightest cluster galaxies and their surroundings
Louise O. V. Edwards,Matthew Aaron Salinas,Steffanie Stanley,Priscilla Elise Holguin West,Isabella Trierweiler,Isabella Trierweiler,Hannah S. Alpert,Hannah S. Alpert,Paula Coelho,Saisneha Koppaka,Grant R. Tremblay,Hugo Martel,Yuan Li +12 more
TL;DR: In this article, the formation and evolution of local brightest cluster galaxies (BCGs) is investigated by determining the stellar populations and dynamics from the galaxy core, though the outskirts and into the intracluster light (ICL).
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Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-Effect Sensors
Hannah S. Alpert,Karen M. Dowling,Caitlin A. Chapin,Ananth Saran Yalamarthy,Savannah R. Benbrook,Helmut Kock,Udo Ausserlechner,Debbie G. Senesky +7 more
TL;DR: In this paper, the effect of metal contact lengths on current- and voltage-scaled sensitivities and magnetic field offsets of octagonal AlGaN/GaN and InAlN/GAN Hall-effect sensors were examined.
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Sensitivity of 2DEG-based Hall-effect sensors at high temperatures
Hannah S. Alpert,Caitlin A. Chapin,Karen M. Dowling,Savannah R. Benbrook,Helmut Kock,Udo Ausserlechner,Debbie G. Senesky +6 more
TL;DR: Both GaN-based Hall-effect sensors showed consistency in their voltage- and current-scaled sensitivity over multiple temperature cycles as well as nearly full recovery when returned to room temperature after thermal cycling, suggesting that GaN and AlGaN/GaN are a good candidate for use in high temperature applications.
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Micro-Tesla Offset in Thermally Stable AlGaN/GaN 2DEG Hall Plates Using Current Spinning
Karen M. Dowling,Hannah S. Alpert,Ananth Saran Yalamarthy,Peter F. Satterthwaite,Sai Kumar,Helmut Kock,Udo Ausserlechner,Debbie G. Senesky +7 more
TL;DR: In this paper, a low-offset GaN/GaN 2D Hall plate with a four-phase current spinning technique was used to reduce the sensor offset voltage to values in the range of ∼20 nV, which corresponds to a low residual offset of ∼3.4 ± 2μ T when supplied with low voltages.