Hans C. Pfeiffer

TL;DR: In this article, an electron beam system for direct writing applications combining the parallel throughput of a projection system and the stitching capability of a probe-forming system employs an electron gun to illuminate an initial aperture uniformly, a first set of controllable deflectors to scan the beam over the reticle parallel to the system axis, impressing the pattern of a subfield of a reticle in each exposure, in which a first variable axis lens focuses an image of the initial aperture on the retina, a second variable axis collimates the patterned beam, and a third variable angle lens

TL;DR: This paper is an overview of work in the IBM Microelectronics Division to extend electron-beam lithography technology to the projection level for use in next-generation lithography, and the approach being explored--Projection Reduction Exposure with Variable Axis Immersion Lenses (PREVAIL)--combines the high exposure efficiency of massively parallel pixel projection with scanning-probe-forming systems to dynamically correct for aberrations.

TL;DR: Project PREVAIL (Projection Exposure with Variable Axis Immersion Lenses) has been initiated to develop an e-beam alternative to ''sub-optical'' lithography, providing superior resolution and pattern placement accuracy at competitive throughput as mentioned in this paper.

TL;DR: In this article, the VAIL system employs writing of lithographic patterns with a shaped electron beam exposure system, which minimizes the time wasted by workpiece positional requirements by reducing the number of mechanical scans required to write the pattern on the workpiece.

TL;DR: In this paper, the authors proposed a beamforming method for rectilinear patterns with a minimum of exposure steps and substantially no exposure overlap. But this method requires the electron beam to pass through a square shape.