Showing papers in "Microelectronic Engineering in 1995"

TL;DR: Very deep trenches in Si with smooth controllable profiles are etched using a fluorine-based Reactive Ion Etcher (RIE) in this article, where the effect of various mask materials and loading on the profile is examined using the Black Silicon Method.

TL;DR: The use of pyroelectric lead titanate thin films for infrared detection and integrated, piezoelectric lead zirconate titanate (PZT) thin film for actuator applications is discussed in this paper.

TL;DR: In this paper, a sidewall passivation mechanism was proposed to explain the reduction of the lateral etching rate of Si/SiO"2 at selectivities well above 100/1, with anisotropic profile.

TL;DR: In this article, it was shown that at ambient temperature, atomic hydrogen from a remote plasma produces large numbers of interface states which are not due to silicon dangling bonds, and the release of atomic hydrogen by hot electrons or by radiation during device operation will inevitably lead to device degradation.

TL;DR: In this article, the performance achievable using thin film ferroelectrics of the lead zirconate titanate system is discussed theoretically, and compared with that of existing arrays based upon thinned pyroelectric ceramic.

TL;DR: In this paper, the dielectric properties of ferroelectric (FE) films at microwave (MW) were investigated and the results of the measurements of SrTiO 3 (STO) and Ba 0.5 (BSTO).

TL;DR: Several metal oxide perovskites and Bi-layered perovsites are of substantial interest for integrated circuit memories as mentioned in this paper, and the high remanent polarization of ferroelectric lead zirconate titanate and strontium bismuth tantalate hold out the promise of lowvoltage, high-speed, nonvolatile memories.

TL;DR: In this article, the possible conduction processes in Pt-PZT-Pt capacitors are analyzed, based on the electronic properties of PZT and of the Pt-pZT interface.

TL;DR: In this paper, an extensive PISCES simulation was carried out to obtain an in-depth understanding of the recently observed opposite channel based charge injection in SOI MOSFETs.

TL;DR: In this article, the authors performed measurements on virgin and fatigued ferroelectric PZT thin films prepared by spin-on sol-gel deposition process on Si/SiO2/Ti/Pt substrates.

TL;DR: The Digital Micromirror Device is a micro-mechanical device which includes an array of mirrors fabricated above CMOS static RAM memory elements which allows incident light to be modulated to form high definition images for projection display systems.

TL;DR: Project PREVAIL (Projection Exposure with Variable Axis Immersion Lenses) has been initiated to develop an e-beam alternative to ''sub-optical'' lithography, providing superior resolution and pattern placement accuracy at competitive throughput as mentioned in this paper.

TL;DR: In this article, a modified Namba model is introduced to explain the measured thickness dependence of resistivity, and the percolation threshold is obtained, which is both important with respect to the absorber quality and fabrication.

TL;DR: In this paper, anomalous positive charge (APC) near the Si SiO 2 interface by atomic hydrogen exposure at room temperature has been studied and the APC exhibits a range of charging/discharging times from fractions of a second to hours.

TL;DR: In this article, the main steps of integrated optical waveguide formation and experimental results on lightguiding in the visible range are presented, where optical waveguiding has been observed in oxidized porous silicon layers.

TL;DR: In this paper, normal incidence reflectivity measurements of EUV reflective multilayer coatings for @l=13-14 nm, the wavelength of interest for EUV projection lithography, are presented.

TL;DR: In this article, a combination of UV patterning of very thick photoresist layers and molding of the resulting patterns by galvanoplating is used for advanced surface micromachining.

TL;DR: In this article, the degradation of piezoelectric coefficient with time is described by a logarithmic law with aging rates comparable to those of switching polarization, and the aging rates are sensitive to poling conditions and to orientation of the poling field with respect to the direction of preferred polarization.

TL;DR: In this article, the authors studied oxide degradation and breakdown using Substrate Hot Electron (SHE) and Fowler-Nordheim (FN) injection techniques and showed that the generation of electron traps during stress and breakdown are identical with both techniques and therefore SHE-injection can be used to study breakdown mechanisms at medium oxide fields that are not accessible with FN-injections.

TL;DR: In this paper, the authors concluded that the generation of neutral electron traps in thin oxides is the dominant cause of leakage currents introduced in the low-field, direct-tunneling regime of thin silicon dioxide layers after high-field stress.

TL;DR: In this article, the behavior of resonance frequencies was studied as a function of membrane thickness and de-bias, in order to derive the total stress in the films and the piezoelectric coupling constant.

TL;DR: In this paper, an overview of the role of chemistry and subsequent thermal treatment of thin perovskite films is given, and specific examples demonstrate that the structural evolution of the deposited thin films strongly depends on the used thermal ramp and the deposited film thickness.

TL;DR: In this article, self-assembled monolayers have been demonstrated to perform as high-resolution electron beam resists with minimum resolutions of <20nm for 50keV electron beams and <15nm for 10eV electrons from a scanning tunneling microscope.

TL;DR: In this paper, an electron beam lithography system for structures as small as 10nm and pattern samples produced on it is described, which works with electron energies from 20keV down to 1keV.

TL;DR: In this article, pyroelectric PbTiO3 thin films with two temperature compensating elements on a SiO2/Si3N4 membranes have been fabricated and characterized, and the measured voltage responsivity as a function of radiation modulation frequency has been compared to finite element model calculation.

TL;DR: Silicon reactive ion etching using a mixture of SF"6 and CHF"3 at room temperature was investigated in this paper, where the etching characteristics as a function of gas composition, rf power, pressure and masking material as well as electrode material were studied.

TL;DR: In this article, a technique which satisfies both high resolution and minimum linewidth fluctuation has been developed for fabrication of nanometer-scale Si structures, based on the development of resist with hexyl acetate and the anisotropic etching of Si with KOH.

TL;DR: In this article, the influence of oxide and interface quality on the performance of silicon carbide power MOSFETs is analyzed, and it is demonstrated that the specific on-resistance of SiC devices will be severely degraded by the poor surface inversion mobility reported in the literature.

TL;DR: In this article, the linear and quadratic electrooptic coefficients of PZT 53 47 and PLZT 28/0/100 were obtained using multiangle reflection ellipsometry.