Showing papers by "Hans-Gerd Boyen published in 2008"
TL;DR: In this paper, the diffusion kinetics of a thin amorphous Si layer into amorphou geodesic polysilicon (Ge) was investigated and the initial kc was found at 0.7±0.1, and after some monolayers of Si dissolved into the Ge, kc changes to the generally expected classical Fickian law with kc=0.5.
Abstract: Over the last years, several experimental and theoretical studies of diffusion kinetics on the nanoscale have shown that the time evolution (x∝tkc) differs from the classical Fickian law (kc=0.5). However, all work was based on crystalline samples or models, so far. In this letter, we report on the diffusion kinetics of a thin amorphous Si layer into amorphous Ge to account for the rising importance of amorphous materials in nanodevices. Employing surface sensitive techniques, the initial kc was found at 0.7±0.1. Moreover, after some monolayers of Si dissolved into the Ge, kc changes to the generally expected classical Fickian law with kc=0.5.
22 citations
TL;DR: In this paper, the properties of epitaxially grown c-BN films on diamond were analyzed for their mechanical properties by applying nanoindentation and scratch experiments, and the results showed that the hardness and adhesion of the epitaxial films were significantly improved as compared to non-epitaxial C-BNs on silicon.
Abstract: Epitaxially grown c-BN films on diamond were analyzed for their mechanical properties by applying nanoindentation and scratch experiments. Hardness and adhesion of epitaxial films on diamond was significantly improved as compared to non-epitaxial c-BN films on silicon. Irradiated films demonstrated even better adhesion as compared to non-irradiated films. The friction results were interpreted considering energy dissipation due to fracture and substrate effects.
2 citations