http://ab-initio.mit.edu/~oskooi/papers/Oskooi10.pdf

Meep: A flexible free-software package for electromagnetic simulations by the FDTD method

The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

http://science.sciencemag.org/content/sci/311/5758/208.full.pdf

Stretchable form of single crystal silicon for high performance electronics on rubber substrates

Over the past three decades a new spectroscopic technique with unique possibilities has emerged. Based on coherent and time-resolved detection of the electric field of ultrashort radiation bursts in the far-infrared, this technique has become known as terahertz time-domain spectroscopy (THz-TDS). In this review article the authors describe the technique in its various implementations for static and time-resolved spectroscopy, and illustrate the performance of the technique with recent examples from solid-state physics and physical chemistry as well as aqueous chemistry. Examples from other fields of research, where THz spectroscopic techniques have proven to be useful research tools, and the potential for industrial applications of THz spectroscopic and imaging techniques are discussed.

Terahertz spectroscopy and imaging – Modern techniques and applications

The worldwide thirst for portable consumer electronics in the 1990s had an enormous impact on portable power. Lithium ion batteries, in which lithium ions shuttle between an insertion cathode (e.g., LiCoO2) and an insertion anode (e.g., carbon), emerged as the power source of choice for the highperformance rechargeable-battery market. The performance advantages were so significant that lithium ion batteries not only replaced Ni-Cd batteries but left the purported successor technology, nickel-metal hydride, in its wake.1 The thick metal plates of * To whom correspondence should be addressed. J.W.L: e-mail, jwlong@ccs.nrl.navy.mil; telephone, (+1)202-404-8697. B.D.: e-mail, bdunn@ucla.edu; telephone, (+1)310-825-1519. D.R.R.: e-mail, rolison@nrl.navy.mil; telephone, (+1)202-767-3617. H.S.W.: e-mail, white@chem.utah.edu; telephone, (+1)810-585-6256. † Naval Research Laboratory. ‡ UCLA. § University of Utah. 4463 Chem. Rev. 2004, 104, 4463−4492

Three-dimensional battery architectures.

Methods to pattern substrates with dense periodic nanostructures that combine top-down lithographic tools and self-assembling block copolymer materials are provided. According to various embodiments, the methods involve chemically patterning a substrate, depositing a block copolymer film on the chemically patterned imaging layer, and allowing the block copolymer to self-assemble in the presence of the chemically patterned substrate, thereby producing a pattern in the block copolymer film that is improved over the substrate pattern in terms feature size, shape, and uniformity, as well as regular spacing between arrays of features and between the features within each array compared to the substrate pattern. In certain embodiments, the density and total number of pattern features in the block copolymer film is also increased. High density and quality nanoimprint templates and other nanopatterned structures are also provided.

https://science.sciencemag.org/content/sci/321/5891/936.full.pdf

Density multiplication and improved lithography by directed block copolymer assembly

A formation process for semiconductor quantum dots based on a surface instability induced by ion sputtering under normal incidence is presented. Crystalline dots 35 nanometers in diameter and arranged in a regular hexagonal lattice were produced on gallium antimonide surfaces. The formation mechanism relies on a natural self-organization mechanism that occurs during the erosion of surfaces, which is based on the interplay between roughening induced by ion sputtering and smoothing due to surface diffusion.

/pdf/formation-of-ordered-nanoscale-semiconductor-dots-by-ion-3hm1q5lnpo.pdf

Formation of Ordered Nanoscale Semiconductor Dots by Ion Sputtering.

Anodic Oxidation of GaAs in Mixed Solutions of Glycol and Water

The embedding of microwave devices is treated by applying the finite-difference method to three-dimensional shielded structures. A program package was developed to evaluate electromagnetic fields inside arbitrary transmission-line connecting structures and to compute the scattering matrix. The air bridge, the transition through a wall, and the bond wire are examined as interconnecting structures. Detailed results are given and discussed regarding the fundamental behavior of embedding.

Three-Dimensional Finite-Difference Method for the Analysis of Microwave-Device Embedding

A new model is presented for the calculation of passive intermodulation (PIM) in waveguide connections. The model considers the roughness of interconnecting waveguide surfaces and the presence of an insulator layer (oxide and contaminants) on these metal surfaces. This results in the generation of a contact resistance, which can excite the PIM level. In particular, the case in which metal-insulator-metal regions are the PIM source is especially investigated. The intermodulation level response is calculated for different waveguide junction parameters like applied mechanical load, surface finish, or metal properties showing qualitative agreement with the measured data published by previous authors.

Passive-intermodulation analysis between rough rectangular waveguide flanges

A new method of forming an anodic native oxide of GaAs with excellent dielectric and interface properties is described. The oxide is grown in a very stable and reproducible manner in an electrolyte which is a suitable mixture of (i) water, (ii) weak carboxylic acid (tartaric or citric acid), and (iii) polyhydric alcohol. The breakdown field strength of the as‐grown oxide is 5×106 V/cm and the specific resistivity is 1014–1016 Ω cm. Relatively low temperature annealing in hydrogen results in greatly improved interface properties with a density of fast interface states near midgap of 1–2×1011 cm−2 eV−1, with only a small capacitance/voltage hysteresis, and only small frequency dispersion of capacitance in the accumulation region.

Hans L. Hartnagel

Papers

Formation of Ordered Nanoscale Semiconductor Dots by Ion Sputtering.

Anodic Oxidation of GaAs in Mixed Solutions of Glycol and Water

Three-Dimensional Finite-Difference Method for the Analysis of Microwave-Device Embedding

Passive-intermodulation analysis between rough rectangular waveguide flanges

New anodic native oxide of GaAs with improved dielectric and interface properties