Properties and Application of Geopolymers Vol. 841 (/MSF.841 /book) Development and Investigation of Materials Using Modern Techniques Vol. 840 (/MSF.840/book) Superplasticity in Advanced Materials ICSAM 2015 Vols. 838-839 (/MSF.838-839/book) 12th International Conference on High Speed Machining Vols. 836-837 (/MSF.836-837/book) Sintering Fundamentals II Vol. 835 (/MSF.835/book) Advanced Machining Technologies: Traditions and Innovations Vol. 834 (/MSF.834/book) Applied Materials and Technologies Vol. 833 (/MSF.833/book) Emerging Functional Materials: Book (/MSF.841/book) Papers (/MSF.841)

Materials Science Forum

Polycrystalline silicon thin-film solar cells: Status and perspectives

Polycrystalline silicon on glass thin-film solar cells: A transition from solid-phase to liquid-phase crystallised silicon

Liquid phase crystallization has emerged as a novel approach to grow large grained polycrystalline silicon films on glass with high electronic quality. In recent years a lot of effort was conducted by different groups to determine and optimize suitable interlayer materials, enhance the crystallographic quality or to improve post crystallization treatments. In this paper, we give an overview on liquid phase crystallization and describe the necessary process steps and discuss their influence on the absorber properties. Available line sources are compared and different interlayer configurations are presented. Furthermore, we present one-dimensional numerical simulations of a rear junction device, considering silicon absorber thicknesses between 1 and 500 mu m. We vary the front surface recombination velocity as well as doping density and minority carrier lifetime in the absorber. The simulations suggest that a higher absorber doping density is beneficial for layer thicknesses below 20 mu m or when the minority carrier lifetime is short. Finally, we discuss possible routes for device optimization and propose a hybride cell structure to circumvent current limitations in device design. (C) 2016 The Japan Society of Applied Physics

http://iopscience.iop.org/article/10.7567/JJAP.55.04EA04/pdf

Liquid phase crystallized silicon on glass: Technology, material quality and back contacted heterojunction solar cells

The present review gives an overview of the various reports on properties of line and planar defects in Cu(In,Ga)(S,Se)2 thin films for high-efficiency solar cells. We report results from various analysis techniques applied to characterize these defects at different length scales, which allow for drawing a consistent picture on structural and electronic defect properties. A key finding is atomic reconstruction detected at line and planar defects, which may be one mechanism to reduce excess charge densities and to relax deep-defect states from midgap to shallow energy levels. On the other hand, nonradiative Shockley–Read–Hall recombination is still enhanced with respect to defect-free grain interiors, which is correlated with substantial reduction of luminescence intensities. Comparison of the microscopic electrical properties of planar defects in Cu(In,Ga)(S,Se)2 thin films with two-dimensional device simulations suggest that these defects are one origin of the reduced open-circuit voltage of the photovoltaic devices

Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se2 thin films for solar cells – a review

The properties of electron-beam crystallized, large-grained silicon layers of about 10 µm thickness on glass have been studied by combining EBIC, EBSD and photoluminescence. It is found that most grains are free of dislocations. From a detailed analysis based on the dependence of EBIC collection efficiency on beam energy we conclude that the recombination properties of the layers are mainly determined by the bulk diffusion length. The estimated bulk diffusion length in the dislocation-free layer regions is in the range of roughly 5 – 7 µm, depending on the recombination velocity assumed for the rear surface. In dislocated regions the diffusion length drops to 1 µm or less. Close to some twin boundaries, an unsusual improvement of the electrical layer properties has been observed. In addition, wave-like inhomogeneities of the layer properties have been established, resulting probably from instabilities during the crystallization process.

Analysis of Electron-Beam Crystallized Large Grained Si Films on Glass Substrate by EBIC, EBSD and PL

The influence of GBs contained in the channel of MOS-FETs - fabricated in thin SOI layers - is demonstrated. The drain current measured at room temperature increases about 50 times for nFETs and about 10 times for pFETs, respectively, as compared to reference devices. The observations might be interpreted as a strong increase of the mobility of charge carriers. Moreover, the observed stepwise changes of the drain current at 5 K may point to Coulomb blockades.

Charge Carrier Transport along Grain Boundaries in Silicon

We report on 0.93 eV luminescence observed in multicrystalline silicon. The spectral line is close to the well known D3 one, but its properties are different. The new feature shows a remarkable intensity at room temperature, exceeding the intensity of the band to band radiative transition. Moreover, it appears as a single line in the entire temperature range 10-300K, in contrast to the D3, which is usually accompanied by D4. Cathodoluminescence (CL) and electron beam induced current (EBIC) micrographs revealed that the centers causing 0.93 eV emission are irregularly distributed along certain grain boundaries. Electron backscattering diffraction examination showed that the 0.93 eV luminescence appears at grain boundaries characterized by a lattice rotation around a axis. The EBIC contrast at those irregularities indicates strong total recombination. Based on an analysis of the temperature dependence of the CL intensity and the EBIC contrast we obtained an activation energy of about 120 meV.

Properties of Strong Luminescence at 0.93 eV in Solar Grade Silicon

The influence of dislocations in the channel of MOS-FETs is analyzed. The drain current at room temperature increases about 50 times for nFETs and about 10 times for pFETs, as compared to reference devices. The observations might be interpreted as a strong increase of the mobility of charge carriers. Moreover, the observed stepwise changes of the drain current at 5 K may point to Coulomb blockades.

Hans Michael Krause

Papers

Analysis of Electron-Beam Crystallized Large Grained Si Films on Glass Substrate by EBIC, EBSD and PL

Charge Carrier Transport along Grain Boundaries in Silicon

Properties of Strong Luminescence at 0.93 eV in Solar Grade Silicon

Carrier transport on dislocations in silicon