The term photonic crystals appears because of the analogy between electron waves in crystals and the light waves in artificial periodic dielectric structures. During the recent years the investigation of one-, two-and three-dimensional periodic structures has attracted a widespread attention of the world optics community because of great potentiality of such structures in advanced applied optical fields. The interest in periodic structures has been stimulated by the fast development of semiconductor technology that now allows the fabrication of artificial structures, whose period is comparable with the wavelength of light in the visible and infrared ranges.

http://ieeexplore.ieee.org/iel5/6354/16969/00781867.pdf

Photonic crystals

There are growing concerns over the environmental, climate, and health impacts caused by using non-renewable fossil fuels. The utilization of green energy, including solar and wind power, is believed to be one of the most promising alternatives to support more sustainable economic growth. In this regard, lithium-ion batteries (LIBs) can play a critically important role. To further increase the energy and power densities of LIBs, silicon anodes have been intensively explored due to their high capacity, low operation potential, environmental friendliness, and high abundance. The main challenges for the practical implementation of silicon anodes, however, are the huge volume variation during lithiation and delithiation processes and the unstable solid-electrolyte interphase (SEI) films. Recently, significant breakthroughs have been achieved utilizing advanced nanotechnologies in terms of increasing cycle life and enhancing charging rate performance due partially to the excellent mechanical properties of nanomaterials, high surface area, and fast lithium and electron transportation. Here, the most recent advance in the applications of 0D (nanoparticles), 1D (nanowires and nanotubes), and 2D (thin film) silicon nanomaterials in LIBs are summarized. The synthetic routes and electrochemical performance of these Si nanomaterials, and the underlying reaction mechanisms are systematically described.

Silicon-based Nanomaterials for Lithium-Ion Batteries - A Review

Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely suitable for depositing uniform and conformal films on complex three-dimensional topographies. The deposition of a film of a given material by ALD relies on the successive, separated, and self-terminating gas–solid reactions of typically two gaseous reactants. Hundreds of ALD chemistries have been found for depositing a variety of materials during the past decades, mostly for inorganic materials but lately also for organic and inorganic–organic hybrid compounds. One factor that often dictates the properties of ALD films in actual applications is the crystallinity of the grown film: Is the material amorphous or, if it is crystalline, which phase(s) is (are) present. In this thematic review, we first describe the basics of ALD, summarize the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD [R. L. Puurunen, J. Appl. Phys. 97, 121301 (2005)], and give an overview of the status of processing ternary compounds by ALD. We then proceed to analyze the published experimental data for information on the crystallinity and phase of inorganic materials deposited by ALD from different reactants at different temperatures. The data are collected for films in their as-deposited state and tabulated for easy reference. Case studies are presented to illustrate the effect of different process parameters on crystallinity for representative materials: aluminium oxide, zirconium oxide, zinc oxide, titanium nitride, zinc zulfide, and ruthenium. Finally, we discuss the general trends in the development of film crystallinity as function of ALD process parameters. The authors hope that this review will help newcomers to ALD to familiarize themselves with the complex world of crystalline ALD films and, at the same time, serve for the expert as a handbook-type reference source on ALD processes and film crystallinity.

Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

Porous anodic aluminum oxide: anodization and templated synthesis of functional nanostructures.

In the present review we try to give a comprehensive and most up to date view to the field, with an emphasis on the currently most investigated anodic TiO2 nanotube arrays. We will first give an overview of different synthesis approaches to produce TiO2 nanotubes and TiO2 nanotube arrays, and then deal with physical and chemical properties of TiO2 nanotubes and techniques to modify them. Finally, we will provide an overview of the most explored and prospective applications of nanotubular TiO2.

One-dimensional titanium dioxide nanomaterials: nanotubes.

Wafers prepared by an HF dip without a subsequent water rinse were bonded at room temperature and annealed at temperatures up to 1100 °C. Based on substantial differences between bonded hydrophilic and hydrophobic Si wafer pairs in the changes of the interface energy with respect to temperature, secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM), we suggest that hydrogen bonding between Si‐F and H‐Si across two mating wafers is responsible for room temperature bonding of hydrophobic Si wafers. The interface energy of the bonded hydrophobic Si wafer pairs does not change appreciably with time up to 150 °C. This stability of the bonding interface makes reversible room‐temperature hydrophobic wafer bonding attractive for the protection of silicon wafer surfaces.

/pdf/hydrophobic-silicon-wafer-bonding-22utw6pyo8.pdf

Hydrophobic silicon wafer bonding

In the course of miniaturization down to the nanometer scale, much remains unknown concerning how and to what extent the properties of materials are changed. To learn more about the dynamics of condensed isolated polymer chains, we used broadband dielectric spectroscopy and a capacitor with nanostructured electrodes separated by 35 nanometers. We measured the dynamic glass transition of poly(2-vinylpyridine) and found it to be bulk-like; only segments closer than 0.5 nanometer to the substrate were weakly slowed. Our approach paves the way for numerous experiments on the dynamics of isolated molecules.

https://science.sciencemag.org/content/sci/341/6152/1371.full.pdf

Glassy dynamics in condensed isolated polymer chains.

Large-area monodomain porous alumina arrays with an interpore distance of 500 nm are fabricated by imprint lithography. A 4 in. imprint master fully compatible with silicon technology was developed, which allows imprint pressures as low as 5 kN/cm2 for direct imprint on aluminum. Due to the self-ordering phenomenon of porous alumina growth, we were able to reduce the interpore distance of the pore array to 60% of the lattice constant of the master stamp. Three lithographically defined pores are sufficient to guide anodization of a new pore in the center.

/pdf/fabrication-of-monodomain-alumina-pore-arrays-with-an-43ynr06t3x.pdf

Fabrication of monodomain alumina pore arrays with an interpore distance smaller than the lattice constant of the imprint stamp

In microsystems technologies, frequently complex structures consisting of structured or plain silicon or other wafers have to be joined to one mechanically stable configuration. In many cases, wafer bonding, also termed fusion bonding, allows to achieve this objective. The present overview will introduce the different requirements surfaces have to fulfill for successful bonding especially in the case of silicon wafers. Special emphasis is put on understanding the atomistic reactions at the bonding interface. This understanding has allowed the development of a simple low temperature bonding approach which allows to reach high bonding energies at temperatures as low as 150°C. Implications for pressure sensors will be discussed as well as various thinning approaches and bonding of dissimilar materials.

/pdf/wafer-bonding-for-microsystems-technologies-am222olemf.pdf

Wafer bonding for microsystems technologies

Studies dealing with the bonding behavior of silicon wafers coated with thermal oxide, plasma-enhanced chemical vapor deposition (PE-CVD) oxide, PE-CVD oxynitride, PE-CVD nitride and low-pressure (LP) CVD nitride are presented The PE-CVD layers require a chemo-mechanical polishing (CMP) before bonding to reduce the surface roughness The bonding energies of the wafer pairs with different interface layers are similar to those of bonded hydrophilic silicon wafers Infrared microscopy of patterned wafer pairs reveals interfaces which are almost free of bubbles Presumably, the gas, which usually generates such interface bubbles, diffuses into the interface cavities The tensile strengths of patterned wafer pairs including a PE-CVD oxide or a PE-CVD oxynitride interface layer are about twice as high as for patterned hydrophilic silicon wafer pairs

Manfred Reiche

Papers

Hydrophobic silicon wafer bonding

Glassy dynamics in condensed isolated polymer chains.

Fabrication of monodomain alumina pore arrays with an interpore distance smaller than the lattice constant of the imprint stamp

Wafer bonding for microsystems technologies

Wafer bonding of silicon wafers covered with various surface layers