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Winfried Seifert
Researcher at Innovations for High Performance Microelectronics
Publications - 116
Citations - 1632
Winfried Seifert is an academic researcher from Innovations for High Performance Microelectronics. The author has contributed to research in topics: Silicon & Dislocation. The author has an hindex of 22, co-authored 115 publications receiving 1581 citations. Previous affiliations of Winfried Seifert include University of California, Berkeley & Brandenburg University of Technology.
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Grain boundary segregation in multicrystalline silicon: correlative characterization by EBSD, EBIC, and atom probe tomography
Andreas Stoffers,Oana Cojocaru-Mirédin,Winfried Seifert,Stefan Zaefferer,Stephan Riepe,Dierk Raabe +5 more
TL;DR: In this paper, the influence of crystallographic structure and impurity decoration on the recombination activity at grain boundaries in multicrystalline silicon ingots has been investigated and a direct correlation between grain boundary structure, atomic scale segregation information, and electrical activity has been established.
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Influence of dislocation density on recombination at grain boundaries in multicrystalline silicon
TL;DR: In this paper, the causes of room-temperature recombination activity of grain boundaries in annealed multicrystalline silicon using the methods of electron-beam-induced current (EBIC) and transmission electron microscopy were investigated.
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Recombination properties of structurally well defined NiSi2 precipitates in silicon
TL;DR: In this paper, the recombination properties of structurally well defined NiSi2 precipitates in n-type silicon were investigated and it was shown that the minority-carrier diffusion length (LD) measured by electron beam induced current (EBIC) is related to the precipitate density.
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Out-diffusion and precipitation of copper in silicon: An electrostatic model
C. Flink,H. Feick,Scott A. McHugo,Winfried Seifert,Henry Hieslmair,Thomas Heiser,A. A. Istratov,Eicke R. Weber +7 more
TL;DR: It was found that below a critical contamination the copper predominantly diffuses out to the surface, while for higher initial copper concentrations it mainly precipitates in the bulk.
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Research on efficiency limiting defects and defect engineering in silicon solar cells - results of the German research cluster SolarFocus
Stephan Riepe,Stephan Riepe,Isolde E. Reis,Isolde E. Reis,Wolfram Kwapil,M. A. Falkenberg,Jonas Schön,Herfried Behnken,J. Bauer,D. Kreßner-Kiel,Winfried Seifert,Wolfgang Koch +11 more
TL;DR: In this paper, a series of multicrystalline silicon ingots of ultrapure feedstock material were cast with intentional addition of typical transition metal impurities (Fe, Cu, Cr) and Ge as doping elements.