Showing papers by "Hans Norström published in 1982"
TL;DR: In this article, it is shown that the ion-assisted chemical reaction between oxygen or nitrogen and the polymerizing species, forming volatile products, together with the physical sputtering, makes these areas accessible to fluorine-containing species responsible for the chemical etching of SiO 2.
15 citations
TL;DR: In this paper, the results of applying titanium silicide as low resistive (1.2 Ω/) gate and interconnect material, in short channel (1 μm) MOS technology are presented.
Abstract: The results of applying titanium silicide as low resistive (1.2 Ω/) gate and interconnect material, in short channel (1 μm) MOS technology are presented. Some aspects of silicide formation on mono- and polycrystalline silicon are discussed, together with the oxidation of the polycide layer (TiSi2 on top of poly-Si). Plasma etching was successfully used for patterning of the polycide structure. A new approach has been taken, using ion implantation for the doping of the polysilicon layer. The different behaviour of arsenic and phosphorus doped polycide structure is observed. Finally, some results of electrical characterization of short channel MOS transistors are presented.
11 citations