Showing papers by "Hans Norström published in 2012"
TL;DR: In this paper, the authors present a new type of substrate where the oxide insulator and the SOI is replaced by a new substrate, where the insulator can be replaced with a new SOI.
Abstract: SOI enables reduced capacitive coupling in RF power technology but the thick oxide causes thermal problems. In this paper, the authors present a new type of substrate, where the oxide insulator and ...
15 citations
TL;DR: In this article, a hybrid substrate which uses a thin layer of polycrystalline silicon and polycrystaline silicon carbide (Si-on-poly-SiC) to replace the thermally unfavorable box and the silicon substrate is presented.
Abstract: Silicon-on-insulator (SOI) substrates can reduce radiofrequency (RF) substrate losses due to their buried oxide (BOX). On the other hand, the BOX causes problems since it acts as a thermal barrier. Oxide has low thermal conductivity and traps heat generated by devices on the SOI. This paper presents a hybrid substrate which uses a thin layer of polycrystalline silicon and polycrystalline silicon carbide (Si-on-poly-SiC) to replace the thermally unfavorable BOX and the silicon substrate. Substrates of 150 mm were fabricated by wafer bonding and shown to be stress and strain free. Various electronic devices and test structures were processed on the hybrid substrate as well as on a low-resistivity SOI reference wafer. The substrates were characterized electrically and thermally and compared with each other. Results showed that the Si-on-poly-SiC wafer had 2.5 times lower thermal resistance and exhibited equal or better electrical performance compared with the SOI reference wafer.
4 citations