An overview of the state of art in ferroelectric thin films is presented. First, we review applications: microsystems' applications, applications in high frequency electronics, and memories based on ferroelectric materials. The second section deals with materials, structure (domains, in particular), and size effects. Properties of thin films that are important for applications are then addressed: polarization reversal and properties related to the reliability of ferroelectric memories, piezoelectric nonlinearity of ferroelectric films which is relevant to microsystems' applications, and permittivity and loss in ferroelectric films-important in all applications and essential in high frequency devices. In the context of properties we also discuss nanoscale probing of ferroelectrics. Finally, we comment on two important emerging topics: multiferroic materials and ferroelectric one-dimensional nanostructures. (c) 2006 American Institute of Physics.

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Ferroelectric thin films: Review of materials, properties, and applications

J. Y. Tsao,* S. Chowdhury, M. A. Hollis,* D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar,* S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo, M. E. Coltrin, J. A. Cooper, K. R. Evans, S. Graham, T. A. Grotjohn, E. R. Heller, M. Higashiwaki, M. S. Islam, P. W. Juodawlkis, M. A. Khan, A. D. Koehler, J. H. Leach, U. K. Mishra, R. J. Nemanich, R. C. N. Pilawa-Podgurski, J. B. Shealy, Z. Sitar, M. J. Tadjer, A. F. Witulski, M. Wraback, and J. A. Simmons

/pdf/ultrawide-bandgap-semiconductors-research-opportunities-and-49ev1zu2ym.pdf

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

Phosphorescent organic light-emitting devices (OLEDs) have attracted increased attention from both academic and industrial communities due to their potential practical application in high-resolution full-color displays and energy-saving solid-state lightings. The performance of phosphorescent OLEDs is mainly limited by the phosphorescent transition metal complexes (such as iridium(III), platinum(II), gold(III), ruthenium(II), copper(I) and osmium(II) complexes, etc.) which can play a crucial role in furnishing efficient energy transfer, balanced charge injection/transporting character and high quantum efficiency in the devices. It has been shown that functionalized main-group element (such as boron, silicon, nitrogen, phosphorus, oxygen, sulfur and fluorine, etc.) moieties can be incorporated into phosphorescent emitters and their host materials to tune their triplet energies, frontier molecular orbital energies, charge injection/transporting behavior, photophysical properties and thermal stability and hence bring about highly efficient phosphorescent OLEDs. So, in this review, the recent advances in the phosphorescent emitters and their host materials functionalized with various main-group moieties will be introduced from the point of view of their structure-property relationship. The main emphasis lies on the important role played by the main-group element groups in addressing the key issues of both phosphorescent emitters and their host materials to fulfill high-performance phosphorescent OLEDs.

Functionalization of phosphorescent emitters and their host materials by main-group elements for phosphorescent organic light-emitting devices.

Degradation Mechanisms and Reactions in Organic Light-Emitting Devices.

Blue organic light-emitting diodes (OLEDs) can play a critical role in the field of organic electroluminescence (EL). As the most important applications of OLEDs, both new generation full-color flat-panel displays and future energy-saving solid-state lighting sources require blue color EL to fulfill their functions properly. However, considerable challenges still exist in searching for highly efficient, color stable, and long-lifespan materials and devices that emit blue color, especially in the development of deep-blue emitters, which are indispensable for high-quality displays and lighting sources. Encouragingly, great progress has been made in the area of deep-blue OLEDs in recent years with continuous efforts made by scientists, who are responsible for the significant achievements in the field of OLEDs. Hence, in this review, the crucial tactics employed to obtain high performance deep-blue emitters are presented, including polymers, dendrimers, small organic molecules, delayed fluorescent systems, and phosphorescent emitters. Moreover, the future perspectives and ongoing challenges of this research frontier are also highlighted.

Recent advances of the emitters for high performance deep-blue organic light-emitting diodes

Fluorine cleavage of the light blue heteroleptic triplet emitter FIrpic

Thin film bulk acoustic wave (BAW) resonators and filters are well suited for mobile communication systems operating at high frequencies between 0.5 and 10 GHz. Piezoelectric thin film materials investigated for BAW devices within Philips include AlN thin films. The relationship between sputter deposition conditions, AlN film structure, electromechanical coupling factor kt, and relevant electrical parameters of BAW devices are discussed.

Piezoelectric thin AlN films for bulk acoustic wave (BAW) resonators

Small sized, highly selective solidly mounted bulk acoustic wave (BAW) band pass filters are of great interest for mobile and wireless systems operating in the frequency range of 0.8 GHz up to more than 10 GHz. They can be fabricated on silicon or glass wafers using standard semiconductor integration techniques. These filters are based on electro-acoustic high Q resonators, which exploit the thickness extensional mode of a thin piezoelectric AlN or ZnO film. This film has to be grown with its polar axis, oriented perpendicular to the substrate. Both the deposition process and using a textured electrode support excellent c-axis oriented growth and thus high electromechanical coupling coefficient kt and filter bandwidth. Modelling of the filter and resonator response is performed by means of a combination of a 1D electro-acoustic model together with an electromagnetic model. The paper shows examples of filters operating in the range between 2 and 8 GHz.

RF Bulk Acoustic Wave Resonators and Filters

Degradation of HTL layers during device operation in PhOLEDs

Small sized, highly selective solidly mounted bulk acoustic wave (BAW) band pass filters are suitable for mobile and wireless systems operating in the frequency range 0.8 and 10 GHz. Both lattice and ladder BAW resonator filters have been designed and fabricated on 6" wafers using multilayer Bragg type acoustic reflectors. For the piezoelectric film highly oriented AlN has been deposited using an optimised sputter process. Resonators and filters were made and measured both on glass and silicon wafers. Resonators on glass and Si show different substrate loss. Dielectric loss in the AlN piezo-layer is small. The acoustic loss is found to be small in all the materials. The properties of the acoustic reflector can be monitored by a thorough examination of small details of the resonator's frequency response. Resonator and filter examples are shown for 2 GHz, 2.8 GHz, and 8 GHz.

Hans P. Loebl

Papers

Fluorine cleavage of the light blue heteroleptic triplet emitter FIrpic

Piezoelectric thin AlN films for bulk acoustic wave (BAW) resonators

RF Bulk Acoustic Wave Resonators and Filters

Degradation of HTL layers during device operation in PhOLEDs

Solidly mounted bulk acoustic wave filters for the GHz frequency range