Hanshuang Chen

TL;DR: X-ray photoelectron spectroscopy measurements have confirmed that suppressing the formation of interfacial layer at HfTiO/InGaAs interface can be achieved by introducing the Al2O3 interface passivation layer.

TL;DR: In this paper, the optical properties of Hf1−xTixO2/Si gate stack were investigated by employing Cauchy-Urbach model, and the optical constants, such as refractive index (n), extinction coefficient (k), absorption coefficient (α), and optical band gap (Eg), were determined precisely.

TL;DR: In this paper, the effects of nitrogen incorporation on the interface chemical bonding states, optical dielectric function, band alignment, and electrical properties of sputtering-derived HfTiO high-k gate dielectrics on GaAs substrates have been studied by angle resolved X-ray photoemission spectroscopy (ARXPS), spectroscopic ellipsometry (SE), and electrical measurements.

TL;DR: In this article, the reduction and removal of surface native oxide from as-received InGaAs surface by using dimethylaluminumhydride-derived aluminum oxynitride (AlON) passivation layer prior to HfTiO deposition is proposed to solve Fermi level pinning issue.

TL;DR: In this article, the effect of Al 2 O 3 incorporation on the electrical properties and carrier transportation of AL-deposited HfAlO high-k gate dielectrics on Si substrates have been investigated.