scispace - formally typeset
J

Juan Gao

Researcher at Anhui University

Publications -  13
Citations -  335

Juan Gao is an academic researcher from Anhui University. The author has contributed to research in topics: Photocatalysis & Atomic layer deposition. The author has an hindex of 7, co-authored 10 publications receiving 230 citations. Previous affiliations of Juan Gao include Anhui University of Science and Technology.

Papers
More filters
Journal ArticleDOI

Modulating the Interface Quality and Electrical Properties of HfTiO/InGaAs Gate Stack by Atomic-Layer-Deposition-Derived Al2O3 Passivation Layer

Gang He, +6 more
- 15 Dec 2014 - 
TL;DR: X-ray photoelectron spectroscopy measurements have confirmed that suppressing the formation of interfacial layer at HfTiO/InGaAs interface can be achieved by introducing the Al2O3 interface passivation layer.
Journal ArticleDOI

Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks

Juan Gao, +8 more
- 31 Oct 2017 - 
TL;DR: In this paper, in situ surface passivation Ge substrate by using trimethylaluminum (TMA) prior to HfTiO films deposition and electrical properties of gate stacks have been investigated by X-ray photoelectron spectroscopy (XPS) and electrical measurements systematically.
Journal ArticleDOI

Microstructure, optical, electrical properties, and leakage current transport mechanism of sol–gel-processed high-k HfO2 gate dielectrics

P. Jin, +9 more
- 01 May 2016 - 
TL;DR: In this paper, the structural and optical properties of HfO 2 thin films related to annealing temperature are investigated by X-ray diffraction (XRD), ultraviolet-visible spectroscopy (UV-vis), and spectroscopic ellipsometry (SE).
Journal ArticleDOI

Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation

Juan Gao, +8 more
- 15 May 2016 - 
TL;DR: In this article, the effect of Al 2 O 3 incorporation on the electrical properties and carrier transportation of AL-deposited HfAlO high-k gate dielectrics on Si substrates have been investigated.
Journal ArticleDOI

Microstructure, optical and electrical properties of sputtered HfTiO high-k gate dielectric thin films

S.S. Jiang, +11 more
- 01 Aug 2016 - 
TL;DR: In this paper, the microstructure, optical and electrical properties of HfTiO high-k gate dielectric thin films deposited on Si substrate and quartz substrate by RF magnetron sputtering have been investigated.