A semiconductor device includes a substrate and a number of diffusion regions defined within the substrate. The diffusion regions are separated from each other by a non-active region of the substrate. The semiconductor device includes a number of linear gate electrode tracks defined to extend over the substrate in a single common direction. Each linear gate electrode track is defined by one or more linear gate electrode segments. Each linear gate electrode track that extends over both a diffusion region and a non-active region of the substrate is defined to minimize a separation distance between ends of adjacent linear gate electrode segments within the linear gate electrode track, while ensuring adequate electrical isolation between the adjacent linear gate electrode segments.

Dynamic array architecture

Methods and apparatus for a gate-length biasing methodology for optimizing integrated digital circuits are described. The gate-length biasing methodology replaces a nominal gate-length of a transistor with a biased gate-length, where the biased gate-length includes a bias length that is small compared to the nominal gate-length. In an exemplary embodiment, the bias length is less than 10% of the nominal gate-length.

Gate-length biasing for digital circuit optimization

A restricted layout region includes a diffusion level layout including p-type and n-type diffusion region layout shapes separated by a central inactive region. The diffusion region layout shapes are defined in a non-symmetrical manner relative to a centerline defined to bisect the diffusion level layout. A gate electrode level layout is defined to include linear-shaped layout features placed to extend in only a first parallel direction. Adjacent linear-shaped layout features that share a common line of extent in the first parallel direction are separated by an end-to-end spacing that is substantially equal across the gate electrode level layout and that is minimized to an extent allowed by a semiconductor device manufacturing capability. The gate electrode level layout includes linear-shaped layout features defined along at least four different lines of extent in the first parallel direction. The restricted layout region corresponds to an entire gate electrode level of a cell layout.

Semiconductor Device Layout Including Cell Layout Having Restricted Gate Electrode Level Layout with Linear Shaped Gate Electrode Layout Features Defined Along At Least Four Gate Electrode Tracks with Minimum End-to-End Spacing with Corresponding Non-Symmetric Diffusion Regions

A method is disclosed for defining a dynamic array section to be manufactured on a semiconductor chip. The method includes defining a peripheral boundary of the dynamic array section. The method also includes defining a manufacturing assurance halo outside the boundary of the dynamic array section. The method further includes controlling chip layout features within the manufacturing assurance halo to ensure that manufacturing of conductive features inside the boundary of the dynamic array section is not adversely affected by chip layout features within the manufacturing assurance halo.

Methods for Defining Dynamic Array Section with Manufacturing Assurance Halo and Apparatus Implementing the Same

A substrate portion of a semiconductor device is formed to include a plurality of diffusion regions that are defined in a non-symmetrical manner relative to a virtual line defined to bisect the substrate portion. A gate electrode level region is formed above the substrate portion to include a number of conductive features defined to extend in only a first parallel direction. Each of the number of conductive features within the gate electrode level region is fabricated from a respective originating rectangular-shaped layout feature. The conductive features within the gate electrode level region are defined along at least four different virtual lines of extent in the first parallel direction. A width size of the conductive features within the gate electrode level region is measured perpendicular to the first parallel direction and is less than a wavelength of light used in a photolithography process to fabricate the conductive features.

Semiconductor Device Portion Having Sub-Wavelength-Sized Gate Electrode Conductive Structures Formed from Rectangular Shaped Gate Electrode Layout Features Defined Along At Least Four Gate Electrode Tracks and Having Corresponding Non-Symmetric Diffusion Regions

A method and an apparatus to perform statistical static timing analysis have been disclosed. In one embodiment, the method includes performing statistical analysis on performance data of a circuit from a plurality of libraries at two or more process corners using a static timing analysis module, and estimating performance of the circuit at a predetermined confidence level based on results of the statistical analysis during an automated design flow of the circuit without using libraries at the predetermined confidence level.

Systems, methods, and apparatus to perform statistical static timing analysis

A timing model extractor builds a timing model of a digital circuit for use with a static timing analyzer. This paper proposes a novel method of generating a gray box timing model from a gate-level netlist by reducing a timing graph. Previous methods of generating timing models sacrificed accuracy and/or did not scale well with design size. The proposed method is simple, yet it provides model accuracy including arbitrary levels of latch time borrowing and the capability to support timing constraints that span multiple blocks. Also, cpu and memory resources required to generate the model scale well with size of the circuit. The generated model can provide a capacity improvement in timing verification by more than two orders of magnitude.

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Timing model extraction of hierarchical blocks by graph reduction

Disclosed is a method and system for extracting a timing model. One disclosed approach to extract a timing model is by reducing the timing graph. Original timing behavior is preserved in the timing model including arrival times, slew times, timing violations and even latch time borrowing that is independent of clock waveforms. Also, original timing constraints can be captured in the model and be applied automatically when the model is used. Anchor points are automatically identified and retained to obtain a model that is smaller than the original netlist.

Timing model extraction by timing graph reduction

A method for timing verification of very large scale integrated circuits reduces required CPU speed and memory usage. The method involves steps including partitioning the circuit into a plurality of blocks and then partitioning the verification between shell path components and core path components. Timing verification is then conducted for only shell path components while core path components are abstracted or ignored. Finally, timing verification for core path components in each block completes the process for the entire design.

Timing verification method employing dynamic abstraction in core/shell partitioning

Disclosed is a method and system for handling timing constraints or assertions for timing model extraction. One disclosed approach for assertion handling is by automatically preserving the integrity of original assertions by retaining existing pins or creating new internal pins. The assertions are viewed as part of the model, and a set of new assertions are generated automatically as part of the timing model extraction process and can be stored as part of the model. Assertions can be associated with input ports, output ports, internal pins, or hierarchical pins and can even span multiple blocks. This disclosed approach allows for application of assertions associated with timing models when the model is instantiated and detachment of assertions when the model is de-instantiated, and thus removes one of main problems associated with timing models.

Harish Kriplani

Papers

Systems, methods, and apparatus to perform statistical static timing analysis

Timing model extraction of hierarchical blocks by graph reduction

Timing model extraction by timing graph reduction

Timing verification method employing dynamic abstraction in core/shell partitioning

Assertion handling for timing model extraction