H
He Jiaqi
Researcher at Hong Kong Polytechnic University
Publications - 3
Citations - 77
He Jiaqi is an academic researcher from Hong Kong Polytechnic University. The author has contributed to research in topics: Ohmic contact & Leakage (electronics). The author has an hindex of 1, co-authored 3 publications receiving 10 citations. Previous affiliations of He Jiaqi include Southern University of Science and Technology.
Papers
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Journal ArticleDOI
Recent Advances in GaN‐Based Power HEMT Devices
Journal ArticleDOI
Distinguishing various influences on the electrical properties of thin-barrier AlGaN/GaN heterojunctions with in-situ SiNx caps
He Jiaqi,He Jiaqi,Wei-Chih Cheng,Wei-Chih Cheng,Yang Jiang,Mengya Fan,Guangnan Zhou,Gaiying Yang,Lingli Jiang,Lingli Jiang,Xiang Wang,Zhanxia Wu,Wang Qing,Wang Qing,Hongyu Yu,Hongyu Yu +15 more
TL;DR: In this article, the effects of multiple factors on the electrical properties of thin-barrier AlGaN/GaN heterojunctions with in-situ SiNx caps were investigated using step etching and annealing treatments.
Proceedings ArticleDOI
Study of bilayer Al 2 O 3 /in-situ SiN x dielectric stacks for gate modulation in ultrathin-barrier AlGaN/GaN MIS-HEMTs
TL;DR: In this paper, the bilayer Al 2 O 3 /in-situ SiN x gate dielectric stacks were applied to fabricate high-performance AlGaN/GaN MIS-HEMTs.