He Zhenyu

TL;DR: A flexible three-layer crossbar memristor arrays based on HfAlOx film deposited by controlled growth of low-temperature atomic layer deposition is presented, exhibiting the multilevel information transmission functionality with the power consumption of 4.28 aJ and the speed of 50 ns in per synaptic event.

TL;DR: The novel wearable heterosynapse expands the accessible range of synaptic weights (ratio of facilitation ≈228%), providing an insight into the application of wearable 2D highly efficient neuromorphic computing architectures.

TL;DR: A two-terminal flexible organic artificial synaptic device with ultra-multimodulated conductance states is presented, realizing a face recognition functionality with a strong error-tolerant nature for the first time.

TL;DR: This paper proposes a flexible low-dimensional memristor based on boron nitride (BN), which has ultralow-power non-volatile memory characteristic, reliable digital memcomputing capabilities, and integrated ultrafast neuromorphic computing capabilities in a single in situ computing system.

TL;DR: The present results demonstrate the attractive bio-inspired in-sensor computing behaviors of the optoelectronic memristors, opening up potential applications of optoe reflectors in next-generation reconfigurable sensing-memory-computing integrated paradigms.