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David Wei Zhang
Researcher at Fudan University
Publications - 480
Citations - 10804
David Wei Zhang is an academic researcher from Fudan University. The author has contributed to research in topics: Atomic layer deposition & Thin film. The author has an hindex of 39, co-authored 464 publications receiving 6865 citations.
Papers
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Journal ArticleDOI
Two-dimensional materials for next-generation computing technologies.
Chunsen Liu,Huawei Chen,Shuiyuan Wang,Qi Liu,Qi Liu,Yu-Gang Jiang,David Wei Zhang,Ming Liu,Ming Liu,Peng Zhou +9 more
TL;DR: The opportunities, progress and challenges of integrating two-dimensional materials with in-memory computing and transistor-based computing technologies, from the perspective of matrix and logic computing, are discussed.
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A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications.
TL;DR: A new quasi-non-volatile 2D semi-floating gate memory with high speed and long refresh time with the potential to bridge the gap between volatile and non-Volatile memory technologies, enabling a high-speed and low-power random access memory.
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A MoS 2 /PTCDA Hybrid Heterojunction Synapse with Efficient Photoelectric Dual Modulation and Versatility
Shuiyuan Wang,Chunsheng Chen,Zhihao Yu,Yongli He,Xiaoyao Chen,Qing Wan,Yi Shi,David Wei Zhang,Hao Zhou,Xinran Wang,Peng Zhou +10 more
TL;DR: The first multi‐functional synaptic transistor based on a molybdenum disulfide (MoS2)/perylene‐3,4,9,10‐tetracarboxylic dianhydride (PTCDA) hybrid heterojunction, with remarkable short‐term plasticity (STP) and long‐term Plasticity (LTP), is reported.
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Tunable charge-trap memory based on few-layer MoS2.
Enze Zhang,Weiyi Wang,Cheng Zhang,Yibo Jin,Guodong Zhu,Qing-Qing Sun,David Wei Zhang,Peng Zhou,Faxian Xiu +8 more
TL;DR: In this article, a dual-gate charge-trap memory device composed of a few-layer MoS2 channel and a three-dimensional (3D) Al2O3/HfO2/Al 2O3 gate stack is presented.
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Tunable SnSe2 /WSe2 Heterostructure Tunneling Field Effect Transistor.
TL;DR: This work presents original phenomena of multilayer 2D van der Waals heterostructures which can be applied to low-power consumption devices.