Journal ArticleDOI
Flexible boron nitride-based memristor for in situ digital and analogue neuromorphic computing applications.
Jia-Lin Meng,Tian-Yu Wang,He Zhenyu,Lin Chen,Hao Zhu,Li Ji,Qing-Qing Sun,Shi-Jin Ding,Wenzhong Bao,Peng Zhou,David Wei Zhang +10 more
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TLDR
This paper proposes a flexible low-dimensional memristor based on boron nitride (BN), which has ultralow-power non-volatile memory characteristic, reliable digital memcomputing capabilities, and integrated ultrafast neuromorphic computing capabilities in a single in situ computing system.Abstract:
The data processing efficiency of traditional computers is suffering from the intrinsic limitation of physically separated processing and memory units. Logic-in-memory and brain-inspired neuromorphic computing are promising in-memory computing paradigms for improving the computing efficiency and avoiding high power consumption caused by extra data movement. However, memristors that can conduct digital memcomputing and neuromorphic computing simultaneously are limited by the difference in the information form between digital data and analogue data. In order to solve this problem, this paper proposes a flexible low-dimensional memristor based on boron nitride (BN), which has ultralow-power non-volatile memory characteristic, reliable digital memcomputing capabilities, and integrated ultrafast neuromorphic computing capabilities in a single in situ computing system. The logic-in-memory basis, including FALSE, material implication (IMP), and NAND, are implemented successfully. The power consumption of the proposed memristor per synaptic event (198 fJ) can be as low as biology (fJ level) and the response time (1 μs) of the neuromorphic computing is four orders of magnitude shorter than that of the human brain (10 ms), paving the way for wearable ultrahigh efficient next-generation in-memory computing architectures.read more
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Journal ArticleDOI
Reconfigurable optoelectronic memristor for in-sensor computing applications
Tian-Yu Wang,Jia-Lin Meng,Qing-Xuan Li,He Zhenyu,Hao Zhu,Li Ji,Qing-Qing Sun,Lin Chen,David Wei Zhang +8 more
TL;DR: The present results demonstrate the attractive bio-inspired in-sensor computing behaviors of the optoelectronic memristors, opening up potential applications of optoe reflectors in next-generation reconfigurable sensing-memory-computing integrated paradigms.
Journal ArticleDOI
Ultralow‐Power and Multisensory Artificial Synapse Based on Electrolyte‐Gated Vertical Organic Transistors
Guocai Liu,Qingyuan Li,Wei Shi,Yanwei Liu,Kai Liu,Xueli Yang,Mingchao Shao,Ankang Guo,Xin Huang,Fan Zhang,Zhiyuan Zhao,Yunlong Guo,Yunqi Liu +12 more
TL;DR: In this paper , a multisensory artificial synapse and neural networks based on electrolyte-gated vertical organic field effect transistors (VOFETs) are first developed.
Journal ArticleDOI
Free-Standing Multilayer Molybdenum Disulfide Memristor for Brain-Inspired Neuromorphic Applications.
Amin Abnavi,Ribwar Ahmadi,Amirhossein Hasani,Mirette Fawzy,Mohammad Reza Mohammadzadeh,Thushani De Silva,Niannian Yu,Michael M. Adachi +7 more
TL;DR: In this article, a free-standing multilayer molybdenum disulfide (MoS2)-based memristor with a high current on/off ratio of ∼103 and a stable retention for at least 3000 s was reported.
Journal ArticleDOI
Reconfigurable neuromorphic memristor network for ultralow-power smart textile electronics
Tianyu Wang,Jia-Lin Meng,Xu Zhou,Yue Liu,Zhenyu He,Qi Han,Qing-Xuan Li,Jiajie Yu,Zhenhai Li,Yongkai Liu,Haozhou Zhu,Qing-Qing Sun,D. Zhang,Peining Chen,Huisheng Peng,Lin Chen +15 more
TL;DR: In this paper , a textile memristor network of Ag/MoS 2 /HfAlO x /carbon nanotube with reconfigurable characteristics was reported, which can achieve both nonvolatile synaptic plasticity and volatile neuron functions.
Journal ArticleDOI
Recent Progress in Fabrication and Application of BN Nanostructures and BN-Based Nanohybrids
Dmitry V. Shtansky,Andrei T. Matveev,Elizaveta S. Permyakova,Denis V. Leybo,Anton S. Konopatsky,Pavel B. Sorokin +5 more
TL;DR: In this paper , the critical mass of knowledge and the current state-of-the-art in the field of hexagonal boron nitride (h-BN) fabrication and application based on their amazing properties is analyzed.
References
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The future of electronics based on memristive systems
TL;DR: The state of the art in memristor-based electronics is evaluated and the future development of such devices in on-chip memory, biologically inspired computing and general-purpose in-memory computing is explored.
Journal ArticleDOI
Memristive crossbar arrays for brain-inspired computing
Qiangfei Xia,Jianhua Yang +1 more
TL;DR: The challenges in the integration and use in computation of large-scale memristive neural networks are discussed, both as accelerators for deep learning and as building blocks for spiking neural networks.