H
Heqiu Zhang
Researcher at Dalian University of Technology
Publications - 62
Citations - 886
Heqiu Zhang is an academic researcher from Dalian University of Technology. The author has contributed to research in topics: Thin film & Pulsed laser deposition. The author has an hindex of 15, co-authored 56 publications receiving 743 citations.
Papers
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Journal ArticleDOI
Flexible piezoelectric nanogenerators based on ZnO nanorods grown on common paper substrates.
Yu Qiu,Heqiu Zhang,Lizhong Hu,Dechao Yang,Lina Wang,Bin Wang,Jiuyu Ji,Guoqiang Liu,Xin Liu,Jianfan Lin,Fei Li,Shijun Han +11 more
TL;DR: A simple, low-cost approach to convert low-frequency mechanical energy into electric power using piezoelectric ZnO nanorods grown on a common paper substrate and it is shown that the electric output can be enhanced by scaling the size of the device.
Journal ArticleDOI
Piezoelectric performance enhancement of ZnO flexible nanogenerator by a NiO–ZnO p–n junction formation
TL;DR: In this paper, NiO-ZnO heterojunction is used for piezoelectric performance enhancement via both suppressing the screening effect in the ZnO film and forming a reliable p-n junction at the interfaces instead of the Schottky barriers.
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Ultraviolet electroluminescence from n-ZnO:Ga/p-ZnO:N homojunction device on sapphire substrate with p-type ZnO:N layer formed by annealing in N2O plasma ambient
Jingchang Sun,Hongwei Liang,Jianze Zhao,Jiming Bian,Qiuju Feng,Lizhong Hu,Heqiu Zhang,Xiaoqing Liang,Yingmin Luo,Guotong Du,Guotong Du +10 more
TL;DR: In this article, the reproducible p-type ZnO:N layer with hole concentration of 1.29 × 10 17 cm −3 was formed with NH 3 as N doping source followed by thermal annealing in N 2 O plasma protective ambient.
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Electroluminescence from n-ZnO/p-ZnO : Sb homojunction light emitting diode on sapphire substrate with metal–organic precursors doped p-type ZnO layer grown by MOCVD technology
Jianze Zhao,Hongwei Liang,Jingchang Sun,Jiming Bian,Qiuju Feng,Lizhong Hu,Heqiu Zhang,X P Liang,Yingmin Luo,Guotong Du,Guotong Du +10 more
TL;DR: In this article, an n-ZnO/p-Zno : Sb homojunction light emitting diode was fabricated on c-plane sapphire by metal-organic chemical vapour deposition (MOCVD).
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The light-induced pyro-phototronic effect improving a ZnO/NiO/Si heterojunction photodetector for selectively detecting ultraviolet or visible illumination.
TL;DR: A ZnO/NiO/Si/Si heterojunction photodetector is fabricate, which successfully realizes selective detection of UV or visible light in a single photodentector and the pyro-phototronic effect has been confirmed as an effective approach for enhancing the performance ofPhotodetectors based on ZNO.