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Guotong Du

Researcher at Jilin University

Publications -  302
Citations -  5603

Guotong Du is an academic researcher from Jilin University. The author has contributed to research in topics: Chemical vapor deposition & Metalorganic vapour phase epitaxy. The author has an hindex of 36, co-authored 297 publications receiving 4724 citations. Previous affiliations of Guotong Du include Dalian University of Technology & Yuncheng University.

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High-Efficiency and Air-Stable Perovskite Quantum Dots Light-Emitting Diodes with an All-Inorganic Heterostructure

TL;DR: This study designed and fabricated a stacking all-inorganic multilayer structure by using inorganic perovskite CsPbBr3 quantum dots (QDs) as the emissive layer and inorganic n- type MgZnO and p-type MgNiO as the carrier injectors, respectively, and obtained open possibilities for the design and development of high-efficiency and air-stable PeLEDs that are not dependent on expensive and less-stable organic
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Strategy of Solution-Processed All-Inorganic Heterostructure for Humidity/Temperature-Stable Perovskite Quantum Dot Light-Emitting Diodes.

TL;DR: It is anticipated that this work will provide an effective strategy for the fabrication of high-performance perovskite LEDs with good stability under ambient and harsh conditions, making practical applications of such LEDs a real possibility.
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Silica coating enhances the stability of inorganic perovskite nanocrystals for efficient and stable down-conversion in white light-emitting devices.

TL;DR: The as-prepared CsPbBr3/silica QD composites demonstrated substantially improved stability against heat, light, and environmental oxygen/moisture and were applied as color-converting layer curing on blue light-emitting diodes (LEDs) for white LED applications.
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Control of conductivity type in undoped ZnO thin films grown by metalorganic vapor phase epitaxy

TL;DR: The properties of the ZnO thin films prepared by metalorganic vapor phase epitaxy under various oxygen partial pressures were thoroughly studied in this article, where it was found that the conduction type in undoped znO epilayers could be controlled by adjusting the family VI precursor, oxygen partial pressure during growth.