https://www.jpcomplex.ir/Content/media/image/2013/08/772_orig.pdf

Electrochemical technologies in wastewater treatment

In the past several years, research in each of the wide‐band‐gap semiconductors, SiC, GaN, and ZnSe, has led to major advances which now make them viable for device applications. The merits of each contender for high‐temperature electronics and short‐wavelength optical applications are compared. The outstanding thermal and chemical stability of SiC and GaN should enable them to operate at high temperatures and in hostile environments, and also make them attractive for high‐power operation. The present advanced stage of development of SiC substrates and metal‐oxide‐semiconductor technology makes SiC the leading contender for high‐temperature and high‐power applications if ohmic contacts and interface‐state densities can be further improved. GaN, despite fundamentally superior electronic properties and better ohmic contact resistances, must overcome the lack of an ideal substrate material and a relatively advanced SiC infrastructure in order to compete in electronics applications. Prototype transistors have been fabricated from both SiC and GaN, and the microwave characteristics and high‐temperature performance of SiC transistors have been studied. For optical emitters and detectors, ZnSe, SiC, and GaN all have demonstrated operation in the green, blue, or ultraviolet (UV) spectra. Blue SiC light‐emitting diodes (LEDs) have been on the market for several years, joined recently by UV and blue GaN‐based LEDs. These products should find wide use in full color display and other technologies. Promising prototype UV photodetectors have been fabricated from both SiC and GaN. In laser development, ZnSe leads the way with more sophisticated designs having further improved performance being rapidly demonstrated. If the low damage threshold of ZnSe continues to limit practical laser applications, GaN appears poised to become the semiconductor of choice for short‐wavelength lasers in optical memory and other applications. For further development of these materials to be realized, doping densities (especially p type) and ohmic contact technologies have to be improved. Economies of scale need to be realized through the development of larger SiC substrates. Improved substrate materials, ideally GaN itself, need to be aggressively pursued to further develop the GaN‐based material system and enable the fabrication of lasers. ZnSe material quality is already outstanding and now researchers must focus their attention on addressing the short lifetimes of ZnSe‐based lasers to determine whether the material is sufficiently durable for practical laser applications. The problems related to these three wide‐band‐gap semiconductor systems have moved away from materials science toward the device arena, where their technological development can rapidly be brought to maturity.

Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

Diamond may be grown at low pressures where it is the metastable form of carbon. Recent advances in a wide variety of plasma and electrical discharge methods have led to dramatic increases in growth rates. All of these methods have certain aspects in common, namely, the presence of atomic hydrogen and the production of energetic carbon-containing fragments under conditions that support high mobilities on the diamond surface. Some understanding of the processes taking place during nucleation and growth of diamond has been achieved, but detailed molecular mechanisms are not yet known. Related research has led to the discovery of a new class of materials, the "diamondlike" phases. Vapor-grown diamond and diamondlike materials may have eventual applications in abrasives, tool coatings, bearing surfaces, electronics, optics, tribological surfaces, and corrosion protection.

https://science.sciencemag.org/content/sci/241/4868/913.full.pdf

Low-Pressure, Metastable Growth of Diamond and "Diamondlike" Phases

The recent development in the field of superhard materials with Vickers hardness of ⩾40 GPa is reviewed. Two basic approaches are outlined including the intrinsic superhard materials, such as diamond, cubic boron nitride, C3N4, carbonitrides, etc. and extrinsic, nanostructured materials for which superhardness is achieved by an appropriate design of their microstructure. The theoretically predicted high hardness of C3N4 has not been experimentally documented so far. Ceramics made of cubic boron nitride prepared at high pressure and temperature find many applications whereas thin films prepared by activated deposition from the gas phase are still in the stage of fundamental development. The greatest progress has been achieved in the field of nanostructured materials including superlattices and nanocomposites where superhardness of ⩾50 GPa was reported for several systems. More recently, nc-TiN/SiNx nanocomposites with hardness of 105 GPa were prepared, reaching the hardness of diamond. The principles of de...

https://mediatum.ub.tum.de/doc/958917/file.pdf

The search for novel, superhard materials

Diamond synthesis from gas phase in microwave plasma

A reproducible process is described for growing a thick single-crystal layer of cubic SiC on a single-crystal Si wafer by chemical vapor deposition. A buffer layer, grown in situ, is used between the cubic SiC and the Si substrate to minimize the effect of lattice mismatch. Layers of up to 34 microns thick and several sq cm in area have been grown. Wafers are obtained by chemically removing the Si substrates from the grown layers. Excellent electron channeling patterns produced by these wafers indicate very good crystal quality. Preliminary electrical measurements have yielded electron mobilities up to 380 sq cm/Vs.

Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices

Carbon was deposited on virgin, natural diamond powder from methane gas at 1050°C and 0.3 Torr. The deposits were identified as new diamond by chemical analysis, chemical etching, density measurements, x‐ray and electron diffraction, microwave absorption, electron spin resonance, and visual observations. The crystalline quality of the new diamond layers has not been established; it cound range from polycrystalline material with a large number of defects to true epitaxial layers.

Growth of Diamond Seed Crystals by Vapor Deposition

Advanced thin-film sensor techniques that can provide accurate surface strain and temperature measurements are being developed at NASA Lewis Research Center. These sensors are needed to provide minimally intrusive characterization of advanced materials (such as ceramics and composites) and structures (such as components for Space Shuttle main engine, high-speed civil transport, and general aviation aircraft) in hostile, high-temperature environments, and for validation of design codes. This paper presents two advanced thin-film sensor technologies: strain gauges and thermocouples. These sensors are sputter deposited directly onto the test articles and are only a few micrometers thick; the surface of the test article is not structurally altered and there is minimal disturbance of the gas flow over the surface. The strain gauges are palladium-13% chromium based and the thermocouples are platinum-13% rhodium versus platinum. The fabrication techniques of these thin-film sensors in a class 1000 cleanroom at the NASA Lewis Research Center are described. Their demonstration on a variety of engine materials, including superalloys, ceramics, and advanced ceramic matrix composites, in several hostile, high-temperature test environments is discussed.

Thin-film thermocouples and strain-gauge technologies for engine applications

Study of the phase transformations taking place in 2H SiC single crystals at temperatures as low as 400 C. Some crystals transformed to a structure with one-dimensional disorder along the crystal c axis. Others transformed to a faulted cubic/6H structure. The transformation is time and temperature dependent, and is greatly enhanced by dislocations. The transformation takes place by means of a slip process perpendicular to the c axis. Cubic SiC crystals were observed to undergo a solid-state transformation above 1400 C.

/pdf/low-temperature-solid-state-phase-transformations-in-2h-2axpjy37rz.pdf

Low‐Temperature Solid‐State Phase Transformations in 2H Silicon Carbide

Advanced thin film sensor techniques that can provide accurate surface strain and temperature measurements are being developed at NASA Lewis Research Center. These sensors are needed to provide minimally intrusive characterization of advanced materials (such as ceramics and composites) and structures (such as components for Space Shuttle Main Engine, High Speed Civil Transport, Advanced Subsonic Transports and General Aviation Aircraft) in hostile, high-temperature environments, and for validation of design codes. This paper presents two advanced thin film sensor technologies: strain gauges and thermocouples. These sensors are sputter deposited directly onto the test articles and are only a few micrometers thick; the surface of the test article is not structurally altered and there is minimal disturbance of the gas flow over the surface. The strain gauges are palladium-13% chromium based and the thermocouples are platinum-13% rhodium vs. platinum. The fabrication techniques of these thin film sensors in a class 1000 cleanroom at the NASA Lewis Research Center are described. Their demonstration on a variety of engine materials, including superalloys, ceramics and advanced ceramic matrix composites, in several hostile, high-temperature test environments are discussed.Copyright © 1997 by ASME

/pdf/advances-in-thin-film-sensor-technologies-for-engine-4q3fu1ksao.pdf

Herbert A. Will

Papers

Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices

Growth of Diamond Seed Crystals by Vapor Deposition

Thin-film thermocouples and strain-gauge technologies for engine applications

Low‐Temperature Solid‐State Phase Transformations in 2H Silicon Carbide

Advances in Thin Film Sensor Technologies for Engine Applications