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Photovoltaic (PV) technologies for solar energy conversion represent promising routes to green and renewable energy generation. Despite relevant PV technologies being available for more than half a century, the production of solar energy remains costly, largely owing to low power conversion efficiencies of solar cells. The main difficulty in improving the efficiency of PV energy conversion lies in the spectral mismatch between the energy distribution of photons in the incident solar spectrum and the bandgap of a semiconductor material. In recent years, luminescent materials, which are capable of converting a broad spectrum of light into photons of a particular wavelength, have been synthesized and used to minimize the losses in the solar-cell-based energy conversion process. In this review, we will survey recent progress in the development of spectral converters, with a particular emphasis on lanthanide-based upconversion, quantum-cutting and down-shifting materials, for PV applications. In addition, we will also present technical challenges that arise in developing cost-effective high-performance solar cells based on these luminescent materials.

Enhancing solar cell efficiency: the search for luminescent materials as spectral converters

We analyze theoretically the optical properties of ideal semiconductor crystallites so small that they show quantum confinement in all three dimensions [quantum dots (QD's)]. In the limit of a QD much smaller than the bulk exciton size, the linear spectrum will be a series of lines, and we consider the phonon broadening of these lines. The lowest interband transition will saturate like a two-level system, without exchange and Coulomb screening. Depending on the broadening, the absorption and the changes in absorption and refractive index resulting from saturation can become very large, and the local-field effects can become so strong as to give optical bistability without external feedback. The small QD limit is more readily achieved with narrow-band-gap semiconductors.

Theory of the linear and nonlinear optical properties of semiconductor microcrystallites

Hematite (α-Fe 2 O 3 ) nanoparticles were synthesized via a simple chemical precipitation method. The impact of varying the concentration of precursor on the crystalline phase, size and morphology of α-Fe 2 O 3 products was explored. The characteristic of the synthesized hematite nanoparticles were evaluated by X-ray diffraction (XRD), Transmission Electron Microscopy (TEM), Scanning Electron Microscopy (SEM), Fourier Transform Infra-Red (FT-IR) spectroscopy, Raman spectroscopy, Differential Thermal Analysis (DTA), Thermo Gravimetric Analysis (TGA), Ultraviolet–Visible (UV–Vis) analysis and Photoluminescence (PL). XRD data revealed a rhombohedral (hexagonal) structure with the space group R -3 c in all samples. Uniform spherical like morphology was confirmed by TEM and SEM. The result revealed that the particle sizes were varied between 21 and 82 nm and that the increase in precursor concentration (FeCl 3 , 6H 2 O) is accompanied by an increase in the particle size of 21 nm for pure α-Fe 2 O 3 synthesized with [Fe 3+ ] = 0.05 M at 82 nm for pure α-Fe 2 O 3 synthesized with [Fe 3+ ] = 0.4 M. FT-IR confirms the phase purity of the nanoparticles synthesized. The Raman spectroscopy was used not only to prove that we have synthesized pure hematite but also to identify their phonon modes. The thermal behavior of compound was studied by using TGA/DTA results: The TGA showed three mass losses, whereas DTA resulted in three endothermic peaks. Besides, the optical investigation revealed that samples have an optical gap of about 2.1 eV and that this value varies as a function of the precursor concentration.

Control of the shape and size of iron oxide (α-Fe2O3) nanoparticles synthesized through the chemical precipitation method

A high capacity lithium secondary battery with excellent safety is provided by suppressing expansion of a negative electrode active material during charge and increasing the content of a heat-resistant resin in a separator relative to conventional one. The lithium secondary battery includes: a negative electrode active material that comprises compound particles containing at least one metal element selected from the group consisting of Si, Sn, Al, and Zn; and a separator that has a first porous layer comprising polyolefin and a second porous layer comprising a heat-resistant resin. The separator contains 10 to 60 parts by weight of the second porous layer per 100 parts by weight of the first porous layer.

Lithium Secondary Battery

Amorphous silicon oxide thin films were prepared by the coevaporation technique in ultrahigh vacuum. Different compositions were obtained by changing the evaporation rate of silicon. The samples were then annealed to different temperatures up to 950 °C. The composition and the structure were investigated using energy dispersive x-ray spectroscopy, infrared absorption measurements, and Raman spectroscopy. This study attests the presence of amorphous silicon clusters in a silicon oxide matrix. Optical transmission measurements were performed and interpreted in the field of the composite medium theory. The obtained results are in good agreement with the presented structural model. The photoluminescence in the red-orange domain was studied in relation with the structure. The correlation between the photoluminescence energy and intensity and the structure shows that the light emission originates from the silicon clusters embedded in the silicon oxide matrix. Moreover the dependence of the photoluminescence energy with the silicon volume fraction suggests the origin of the light emission could be due to a quantum confinement effect of carriers in the amorphous silicon clusters.

/pdf/evidence-of-light-emitting-amorphous-silicon-clusters-3qlsfplafl.pdf

Evidence of light-emitting amorphous silicon clusters confined in a silicon oxide matrix

Cu2ZnSnS4 thin films deposition by ultrasonic spray pyrolysis

Silicon nanocrystallites (nc-Si) were obtained by thermal annealing treatments of SiO∕SiO2 multilayers, prepared by evaporation. The nc-Si size was controlled by the SiO thickness. In this study the SiO2 thickness was maintained at 5nm and the SiO thickness was varied from 2to6nm. The film’s microstructure was studied by transmission electron microscopy. A strong photoluminescence was obtained in the visible range which corresponds to the radiative recombination of electron-hole pairs in the nc-Si. The electroluminescence signal is weaker and broader than the photoluminescence one. A model taking into account SiO2 defects and nc-Si is proposed to explain the electroluminescence results.

https://hal.archives-ouvertes.fr/hal-02164227/document

Photoluminescence and electroluminescence of size-controlled silicon nanocrystallites embedded in SiO2 thin films

Yb-doped ZnO thin films were prepared on glass substrates by spray pyrolysis technique in order to investigate the insertion of Yb ions in the ZnO matrix and the related optical properties of the films. The molar ratio of Yb in the spray solution was varied in the range of 0–5 at. %. X-ray diffraction patterns showed that the undoped and Yb-doped ZnO films exhibit the hexagonal wurtzite crystal structure with a preferential orientation along [002] direction. No secondary phase is observed in Yb-doped ZnO films. All films exhibit a transmittance between 75 and 90% in the visible range with a sharp absorption onset about 375 nm corresponding to the fundamental absorption edge at 3.3 eV. The photoluminescence measurements show a clear luminescence band at 980 nm that is characteristic of Yb3+ transition between the electronic levels F25/2 and F27/2. This is an experimental evidence for an efficient energy transfer from ZnO matrix to Yb3+. Hall effect measurements showed low resistivities and high carrier mob...

Structural, optical, and electrical properties of Yb-doped ZnO thin films prepared by spray pyrolysis method

We report on the structural and optical properties of undoped and neodymium doped SnO2 powders (0, 1, 3, and 5 at% of Nd) synthesized by the sol–gel method. SEM and TEM microscopy techniques reveal a nanometric scale of the powders. We show that the tetragonal rutile phase is achieved after annealing at 700 °C. The crystallite size of the doped SnO2 is found to decrease gradually with the increase of Nd content without changing the SnO2 structure. A strong decrease in the intensity of the Raman peaks is noted for doped powders, which can be attributed to the location of Nd3+ ions at the Sn sites indicating Nd incorporation into the host matrix. For the first time the optical properties were studied by UV-Vis-NIR spectroscopy and revealed Nd related absorption bands in the SnO2 matrix. The investigation of the photoluminescence properties shows broad emission centred around 550–650 nm originating from defects present in the SnO2 host matrix. Under 325 nm laser excitation, a strong photoluminescence of trivalent Nd is observed in the infrared region and shows Nd related emission peaks at 885, 1065, and 1336 nm. Such a strong PL signal under laser excitation indicates that Nd3+ is optically active. The excitation dependent PL (PLE) recorded in the 450–700 nm range confirms the presence of active Nd3+ successfully inserted into the SnO2 host matrix.

https://univoak.eu/islandora/object/islandora%3A60424/datastream/PDF/view

Hervé Rinnert

Papers

Evidence of light-emitting amorphous silicon clusters confined in a silicon oxide matrix

Cu2ZnSnS4 thin films deposition by ultrasonic spray pyrolysis

Photoluminescence and electroluminescence of size-controlled silicon nanocrystallites embedded in SiO2 thin films

Structural, optical, and electrical properties of Yb-doped ZnO thin films prepared by spray pyrolysis method

Optical and structural properties of Nd doped SnO2 powder fabricated by the sol-gel method